TSV Shielding Structure for Semiconductor EMI Reduction
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The use of Through Silicon Via (TSV) technology in semiconductor devices leads to significant electromagnetic interference (EMI) in adjacent circuits due to massive currents when TSVs act as power pins, which is a critical issue that needs to be addressed.
Innovation Solution
A semiconductor device is designed with a shelter component placed between the circuit area and the TSV, utilizing an insulation layer and a conductive material like copper, aluminum, or tungsten to prevent EMI by acting as a shield between the TSV and the circuit area, and can be integrated into existing semiconductor manufacturing processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If TSV is used to transmit massive currents for power supply, then power transmission efficiency is improved, but electromagnetic interference (EMI) in adjacent circuits increases
Solution Approach 1:
A shelter structure is introduced as an intermediary element between the TSV and adjacent circuits. The shelter comprises a first portion surrounding the TSV and a second portion extending to the circuit area, creating a protective barrier that mediates the electromagnetic field interaction and reduces EMI while preserving power transmission functionality
Solution Approach 2:
The shelter is divided into two distinct portions: a first portion that surrounds the TSV and a second portion that extends toward the circuit area. This segmentation allows the shelter to perform different functions in different regions - containing the electromagnetic field near the TSV while providing protection to the circuit area
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The implementation of the shelter component effectively reduces noise in adjacent circuits by shielding the EMI caused by massive currents during power transmission through the TSV, enhancing the reliability and efficiency of the semiconductor device.
Implementation Method 1
utilizing an insulation layer and a conductive material like copper, aluminum, or tungsten to prevent EMI by acting as a shield
Implementation Method 2
A semiconductor device is designed with a shelter component placed between the circuit area and the TSV, utilizing an insulation layer and a conductive material like copper, aluminum, or tungsten to prevent EMI by acting as a shield
Data Source
AI summary
A semiconductor device with a TSV and a shelter is provided. The semiconductor device includes a substrate, a circuit area, at least a TSV and a shelter. The circuit area and the TSV are disposed on the substrate, and the TSV penetrates through the substrate. The shelter is disposed on the substrate and at least one part thereof is between the circuit area and the TSV in order to shelter EMI between the TSV and the circuit area. The novel structure prevents the circuits in the circuit area being affected by noise caused by TSV when TSV acts as a power pin.