Through-Silicon Via Test Structure for Sidewall Leakage Mapping
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Solution Overview
Problem
Existing technologies lack efficient and accurate methods for testing sidewall leakage current in through silicon vias, which is crucial for evaluating the performance of semiconductor chips with vertical interconnects.
Innovation Solution
A device and method are provided that utilize a substrate with a through silicon via and surrounding structures to apply a voltage difference, measure current results, and determine leakage current based on radial distance, allowing for accurate testing of sidewall leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional testing methods are used for through silicon vias, then the testing process is simple, but the measurement precision of sidewall leakage current is insufficient
Solution Approach 1:
The testing device is segmented into multiple surrounding structures arranged at different radial distances from the through silicon via. Each surrounding structure independently measures leakage current at its specific distance, enabling precise characterization of sidewall leakage as a function of radial distance without requiring a single complex monolithic device
Solution Approach 2:
Surrounding structures serve as intermediary elements positioned between the through silicon via and the measurement system. These intermediaries collect and channel the sidewall leakage current from different radial positions to measurement interfaces, enabling indirect but precise measurement of leakage current that would otherwise be difficult to access directly
2Measurement precision
If multiple surrounding structures are used to measure leakage current at different distances, then the measurement precision improves, but the device complexity increases
Solution Approach 1:
The device divides the measurement function into multiple segments, with each surrounding structure responsible for measuring leakage at a specific radial distance. This segmentation allows parallel measurement at multiple distances simultaneously, improving overall measurement precision without requiring sequential complex procedures
Solution Approach 2:
Each surrounding structure, while positioned at a different radial distance, performs the same fundamental measurement function of detecting sidewall leakage current. This universality allows the device to maintain functional consistency across multiple measurement points, reducing the complexity that would arise from having fundamentally different measurement mechanisms for each distance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables precise measurement of sidewall leakage current as a function of distance, providing essential parameters for circuit design and improving the accuracy of through silicon via testing.
Implementation Method 1
applying a voltage difference to the at least one test assembly and the through silicon via; obtaining a current result generated by the at least one test assembly and the through silicon via at the voltage difference
Data Source
AI summary
The present disclosure provides a device, comprising: a substrate being provided with a through silicon via; at least one test assembly, each of the at least one test assembly including a surrounding structure, the surrounding structure being arranged around the through silicon via.