TSV Semiconductor Structure With Stop Layer to Limit Antenna Effect
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Solution Overview
Problem
The antenna effect occurs during the dry etching process for forming through-substrate via (TSV) structures due to unequal exposure times of landing pads on different substrates, leading to potential damage and reduced yield and reliability of semiconductor devices.
Innovation Solution
A semiconductor structure design with a thicker stop layer compared to the capping layer, where TSV structures are formed, and a manufacturing method involving selective etching processes to prevent excessive plasma exposure, thereby reducing the antenna effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the dry etching process is used to form TSV structures, then the TSV structures can be formed with precise dimensions, but the landing pad exposed first is exposed to plasma for a longer period of time, causing antenna effect and potential damage
Solution Approach 1:
A thicker stop layer is formed on the second substrate before the bonding process, positioned at a location corresponding to the first landing pad. This preliminary action ensures that during the subsequent dry etching process, the first landing pad is exposed later than the second landing pad, equalizing the plasma exposure time for both landing pads and preventing the antenna effect while maintaining TSV formation precision
Solution Approach 2:
The stop layer acts as an intermediary element between the second landing pad and the etching process. By introducing this intermediate layer with a specific thickness, the plasma exposure time of the first landing pad is controlled to be equal to or less than that of the second landing pad, thereby mediating the harmful antenna effect while preserving the manufacturing precision of TSV structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed structure and method effectively prevent the antenna effect, enhancing the yield and reliability of semiconductor devices by minimizing damage during the TSV formation process.
Implementation Method 1
In the dry etching process for forming the openings, since the landing pads on different substrates are at different heights, the landing pad that is exposed first is exposed to the plasma for a longer period of time.
Data Source
AI summary
A semiconductor structure including the following components is provided. A first device structure includes a first substrate, a first dielectric structure, a first landing pad, and a first capping layer. A second device structure is disposed on the first device structure. The second device structure includes a second substrate, a second dielectric structure, a stop layer, and a second landing pad. The thickness of the stop layer is greater than the thickness of the first capping layer. A first TSV structure is disposed in the second substrate, the second dielectric structure, and the first dielectric structure. The first TSV structure passes through the first capping layer and is electrically connected to the first landing pad. A second TSV structure is disposed in the second substrate and the second dielectric structure. The second TSV structure passes through the stop layer and is electrically connected to the second landing pad.