TSV Support Structure Protruding from Bonding Layer in MEMS
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Solution Overview
Problem
Existing MEMS technologies face challenges in providing adequate structural support for through silicon vias (TSVs) without encroaching on the MEMS structure area or compromising bonding strength.
Innovation Solution
A support structure is designed to protrude from the bonding structure and conformally surround the TSVs, minimizing the increase in bonding area and maintaining strong bonding while providing structural support to the TSVs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a support structure is added to support TSVs, then structural support for TSVs is improved, but bonding area is reduced
Solution Approach 1:
The support structure extends vertically from the first substrate in addition to horizontally, utilizing the third dimension (height) to provide TSV support without consuming additional bonding area on the substrate surface. This dimensional transition allows the support structure to protrude through or alongside the bonding structure, maintaining bonding area while providing necessary mechanical support for TSVs.
2Strength
If bonding area is increased to improve bonding strength, then bonding strength is improved, but MEMS area is reduced
Solution Approach 1:
The bonding structure is configured with non-uniform distribution, concentrating bonding material or enhanced bonding features specifically in regions where bonding strength is most critical, while leaving other regions available for MEMS structure formation. This localized bonding approach ensures adequate bonding strength without requiring uniform expansion of bonding area that would encroach on MEMS device space.
Data Source
AI summary
An embodiment is a method for forming a microelectromechanical system (MEMS) device. The method comprises forming a MEMS structure over a first substrate, wherein the MEMS structures comprises a movable element; forming a bonding structure over the first substrate; and forming a support structure over the first substrate, wherein the support structure protrudes from the bonding structure. The method further comprises bonding the MEMS structure to a second substrate; and forming a through substrate via (TSV) on a backside of the second substrate, wherein the overlying TSV is aligned with the bonding structure and the support structure.