TSV Test Key Layout for Precise Low-Resistance Measurement

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Solution Overview

Problem

It is challenging to monitor the resistance of semiconductor vias (TSVs) due to their low resistance, which complicates the manufacturing process of 3D integrated circuits and packages.

Innovation Solution

The implementation of test keys with resistors and conductors that allow for precise measurement of TSV resistance by creating a voltage drop that facilitates accurate resistance calculation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If TSV resistance measurement is attempted using conventional methods, then the measurement process becomes complex and difficult, but the low resistance of TSVs makes accurate measurement impossible

Engineering Contradiction:
ImproveTSV resistance measurement accuracyVSAvoidTSV resistance measurement difficulty
Core Design Contradiction:
Measurement precisionVSDifficulty of detecting and measuring

Solution Approach 1:

The patent introduces test keys with known resistance values as intermediary elements to measure TSV resistance. These test keys serve as mediators between the measurement instrument and the TSV, enabling accurate measurement by comparing the voltage drop across the test key with that across the TSV. The test key acts as a reference that transforms the difficult direct measurement into a comparable indirect measurement.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent changes the measurement parameter from direct resistance measurement to voltage drop comparison. By applying a known current through both the test key and TSV and measuring the voltage drops, the measurement is transformed from directly measuring low resistance to comparing voltage values, which can be measured with high precision using conventional voltmeters.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If test keys with resistors and conductors are implemented to measure TSV resistance, then measurement precision improves, but device complexity increases

Engineering Contradiction:
ImproveTSV resistance measurement accuracyVSAvoidtest key structure complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent segments the measurement system into distinct functional components: test keys with known resistance values, conductors for current injection, and voltage sensing points. This segmentation allows each component to perform its specific function optimally while making the overall measurement process manageable and systematic, despite the increased structural complexity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables precise measurement of TSV resistance, improving the accuracy of fabrication yields and enhancing the reliability of 3D packaging and integrated circuits.

Implementation Method 1

test keys with resistors and conductors that allow for precise measurement of TSV resistance by creating a voltage drop that facilitates accurate resistance calculation

Methodology Applied
Scientific EffectVoltage drop: Electrical Resistance

Data Source

PatentUS20250191981A1Test key and semiconductor die including the same
Publication Date: 2025.06.12 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250191981A1 patent drawing
  • US20250191981A1 patent drawing
  • US20250191981A1 patent drawing

AI summary

A test key configured to measure resistance of a through semiconductor via in a semiconductor substrate is provided. The test key includes a first resistor, a first conductor, a first probe pad, a second conductor, a second probe pad, a third conductor, a third probe pad, a fourth conductor, and a fourth probe pad. The first probe pad is electrically connected to a first end of the through semiconductor via by the first resistor and the first conductor. The second probe pad is electrically connected to the first end of the through semiconductor via by the second conductor. The third probe pad is electrically connected to a second end of the through semiconductor via by the third conductor. The fourth probe pad is electrically connected to the second end of the through semiconductor via by the fourth conductor.