TSV Test Circuit for Fast Multi-Fault Detection in Stacked Dies
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Solution Overview
Problem
Conventional TSV test circuits are limited in detecting various types of faults, require additional hardware overhead, and take a long time, leading to low defect detection accuracy.
Innovation Solution
A semiconductor device with a TSV test device that includes a buffer die and multiple stack dies, using a TSV test circuit to measure voltages and compare them with a reference voltage to detect various TSV defects, including bridge, Stuck-at-1, open, resistive-open, and pinhole defects, without additional hardware overhead.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional TSV test circuits are used, then the device structure is simple, but the test coverage is limited and detection accuracy is low
Solution Approach 1:
The test device is segmented into multiple functional modules including voltage measurement unit, comparison unit, and defect determination unit. Each module handles specific aspects of TSV testing, allowing complex detection functions to be achieved through coordinated simple components rather than a single complex circuit
Solution Approach 2:
The test device is designed to detect multiple types of TSV defects (open defects, resistive-open defects, short-circuit defects) using a unified testing architecture. The same basic circuit structure can identify different defect types by analyzing voltage characteristics, eliminating the need for separate specialized circuits for each defect type
2Productivity
If conventional TSV test circuits are used, then the hardware overhead is low, but the testing time is long
Solution Approach 1:
The test device applies periodic voltage signals to the TSVs and measures voltage responses at specific time points within each period. By sampling at critical moments during the voltage application cycle, the system quickly determines defect types without requiring prolonged testing
Solution Approach 2:
The comparison unit is pre-configured with reference voltage values corresponding to different defect conditions. When measurement is performed, the actual voltage is immediately compared against these pre-established benchmarks, enabling rapid defect identification without complex real-time analysis
3Adaptability or versatility
If conventional TSV test circuits are used, then the circuit structure is simple, but the test coverage for various fault types is limited
Solution Approach 1:
The test device detects different defect types by measuring and comparing voltage parameters under varying test conditions. By analyzing voltage magnitude, voltage division ratios, and voltage response characteristics, the system can identify open defects, resistive-open defects, and short-circuit defects using a single versatile measurement approach
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The TSV test device quickly and accurately detects multiple types of defects in TSVs, reducing testing time and improving accuracy without requiring extra hardware, thus enhancing test coverage and reliability.
Implementation Method 1
measures at least one test voltage provided by voltage division based on a signal output through the at least one TSV
Data Source
AI summary
A semiconductor system, a semiconductor device, a through-silicon via (TSV) test method, and a method of manufacturing a semiconductor device are provided. The semiconductor system includes a semiconductor device including a buffer die and first to L-th (where L is an integer greater than or equal to 2) stack dies stacked on the buffer die and communicating with the buffer die through N (where N is a positive integer) TSVs; and a TSV test device that measures each of voltages at one end and voltages at another end on the N TSVs according to a clock signal, compares each of the voltages at the one end and the voltages at the other end with a reference voltage, and determines whether each of the N TSVs has a plurality of TSV defect types according to comparison results.