Through-Silicon Via Structure for TFLC Electro-Optic Integration

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Solution Overview

Problem

Integration of thin film lithium-containing electro-optic devices with other technologies results in performance sacrifices, such as large wire bonding areas, robustness issues, and interference from microwave modes due to flip-chip bonding, affecting the performance of both the TFLC electro-optic device and other components.

Innovation Solution

The use of through-silicon vias (TSVs) with conductive fillers and dielectric coatings to electrically connect TFLC electro-optic devices to substrates, eliminating the need for flip-chip bonding and wire bonding, thereby reducing interference and enabling higher density integration.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If wire bonding is used to electrically connect TFLC electro-optic devices to substrates, then electrical connection is achieved, but large bonding areas are required and integration density is reduced

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidbonding area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The patent transitions from planar wire bonding to vertical through-silicon via connections, moving the electrical connection path from the horizontal plane to the vertical dimension. This allows electrical connections to pass through the substrate thickness rather than spreading across the substrate surface, dramatically reducing the area required for electrical connections and enabling higher integration density.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Reliability

If flip-chip bonding is used to integrate TFLC electro-optic devices, then electrical connection is achieved, but microwave modes cause interference and performance degradation

Engineering Contradiction:

Improveelectrical connection reliabilityVSAvoidmicrowave mode interference

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent extracts the harmful microwave mode interference by eliminating the flip-chip bonding configuration that generates these modes. Instead, through-silicon vias provide direct vertical electrical connections that do not create the same electromagnetic interference issues, thereby removing the harmful factor while maintaining electrical connection functionality.

Inventive Principle:

Principle #2Taking out (Extraction)

3Adaptability or versatility

If conventional integration techniques are used for TFLC devices, then integration with other technologies is achieved, but performance sacrifices are made

Engineering Contradiction:

Improveintegration capabilityVSAvoiddevice performance

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent segments the integration approach into modular through-silicon via structures that can be independently optimized. Each via provides a discrete electrical connection path, allowing the electro-optic device to be integrated with different substrate types and configurations without compromising performance, thereby achieving both versatility and performance maintenance.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS20250208482A1Through silicon via for thin film lithium-containing electro-optic devices

Publication Date: 2025.06.26 HYPERLIGHT CORP

AI summary

An electro-optic device is described. The electro-optic device includes a substrate, an oxide layer and a thin film lithium-containing (TFLC) electro-optic layer. The oxide layer is on the substrate. The TFLC electro-optic layer is on the oxide layer. The TFLC electro-optic layer includes a waveguide. The electro-optic device also includes a via extending through the substrate, the oxide layer, and the TFLC electro-optic layer. The via includes a conductive filler.