TSV Conductor Thickness Layout for Heat-Stress Reliability
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Solution Overview
Problem
Through-silicon-via (TSV) structures experience film peeling and deformation due to heat treatment-induced film stress, which affects the reliability and yield of semiconductor devices.
Innovation Solution
A semiconductor device with a through-via featuring a connection electrical conductor having both thin and thick film portions on the side wall of a through-hole in a semiconductor substrate, where the thin film portions reduce film stress and the thick film portions enhance connection reliability and reduce resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a uniform thick film is formed for the connection electrical conductor, then connection reliability and conductivity are improved, but film stress increases causing peeling and deformation
Solution Approach 1:
The connection electrical conductor is designed with non-uniform film thickness, featuring a first region with smaller film thickness and a second region with larger film thickness. This local variation in quality allows different regions to serve different functions: the thinner region reduces film stress and prevents peeling, while the thicker region ensures adequate conductivity and connection reliability.
2Reliability
If heat treatment is applied to form the connection electrical conductor, then conductivity is improved, but film peeling and deformation occur due to generated film stress
Solution Approach 1:
The non-uniform film thickness design allows the heat treatment process to improve conductivity in the thicker regions while the thinner regions experience reduced film stress, preventing peeling and deformation during the heat treatment process.
Solution Approach 2:
By changing the film thickness parameter across different regions of the connection electrical conductor, the patent optimizes the balance between conductivity enhancement through heat treatment and film stress reduction, thereby maintaining film integrity while improving electrical properties.
3Object-affected harmful factors
If film thickness is reduced to minimize stress, then film stress is reduced, but connection reliability and conductivity deteriorate
Solution Approach 1:
The patent applies different film thicknesses in different regions: the first region has smaller film thickness to reduce film stress, while the second region has larger film thickness to ensure adequate conductivity and connection reliability, thus resolving the contradiction between stress reduction and reliability maintenance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively minimizes film stress, preventing peeling and cracking of insulation films and improving the reliability and yield of semiconductor devices by optimizing the film thickness distribution of the connection electrical conductor.
Implementation Method 1
the connection electrical conductor includes a thin film portion with a smaller film thickness and a thick film portion with a larger film thickness... effectively minimizes film stress, preventing peeling and cracking of insulation films
Data Source
AI summary
The present disclosure relates to a semiconductor device, a manufacturing method therefor, and an electronic apparatus by which film stress generated due to heat treatment can be reduced. The semiconductor device includes a through-via on which a connection electrical conductor is formed via an insulation film, the through-via being provided on a side wall of a through-hole formed in a semiconductor substrate, in which the connection electrical conductor includes a thin film portion with a smaller film thickness and a thick film portion with a larger film thickness. The present disclosure can be applied to, for example, a solid-state image pickup apparatus and the like.