TSV Electrical Topology Modeling for Accurate 3D IC Simulation
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Solution Overview
Problem
Current technologies face challenges in accurately simulating three-dimensional integrated circuits with TSV structures, which hinders the understanding of the impact of TSV structures on overall circuit performance.
Innovation Solution
A modeling method and apparatus that acquire electrical parameters of TSV sub-structures, create an electrical topology network model based on connection relationships, and generate a simulation model to simulate the behavior of three-dimensional integrated circuits with TSV structures.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If TSV structures are used to interconnect stacked chips in three-dimensional integrated circuits, then the electrical connection between adjacent dies is improved and packaging losses are reduced, but the accuracy of simulating the impact of TSV structures on overall circuit performance deteriorates
Solution Approach 1:
The TSV structure is divided into multiple sub-structures (conductive plug, liner, barrier layer, fill material, etc.), and each sub-structure is assigned specific electrical parameters. This segmentation allows for more accurate representation of the TSV structure's electrical characteristics in simulation while maintaining the overall reliability improvement benefits.
Solution Approach 2:
An electrical topology network model is introduced as an intermediary between the physical TSV structure and the simulation system. This network model translates the complex physical structure into an equivalent electrical circuit representation, enabling accurate simulation of the TSV structure's impact on circuit performance.
2Measurement precision
If detailed electrical parameters of each TSV sub-structure are acquired and modeled, then the simulation accuracy of circuit performance is improved, but the device complexity and modeling effort increase
Solution Approach 1:
Instead of directly simulating the complex physical TSV structure, an equivalent electrical topology network model is created as a copy. This network model replicates the electrical behavior of the TSV structure using standard circuit elements, simplifying the simulation process while maintaining accuracy.
Solution Approach 2:
The physical TSV structure is transformed into an electrical circuit model by changing the representation parameters from physical dimensions and materials to electrical parameters (resistance, capacitance, inductance). This parameter transformation simplifies the modeling complexity while preserving the essential electrical characteristics for accurate simulation.
Data Source
AI summary
A modeling method includes the following: acquiring electrical parameters of each sub-structure in a through silicon via (TSV) structure; obtaining an electrical topology network model according to a connection relationship of each TSV structure between two dies; and obtaining a simulation model for simulation based on the electrical topology network model and the electrical parameters.