Simultaneous TSV and TST Formation for RF Shielding
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Solution Overview
Problem
Modern semiconductor devices with RF circuits often experience significant electromagnetic interference (EMI) that affects other nearby circuits, posing a challenge that existing technologies have not adequately addressed.
Innovation Solution
The method involves forming a through silicon via (TSV) and a through silicon trench (TST) simultaneously to create a shielding structure around the RF circuit, which electrically connects the RF circuit to a metal interconnection system, thereby reducing EMI and serving as a signal connection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a through silicon trench (TST) and through silicon via (TSV) are formed separately, then the shielding structure and signal connection can be created, but the manufacturing cost and time increase
Solution Approach 1:
The patent combines the formation of the through silicon trench (TST) and through silicon via (TSV) into a single integrated process step. The TST and TSV are etched simultaneously through the substrate using a unified etching mask and process, eliminating the need for separate formation steps. This merging of operations reduces manufacturing complexity, decreases production time, and lowers costs while maintaining the dual functionality of electromagnetic shielding and signal connection.
2Productivity
If the TST and TSV are formed simultaneously, then the manufacturing cost and time are reduced, but the precision of forming both structures must be maintained
Solution Approach 1:
The patent employs distinct etching conditions for the TST and TSV formation within the same etching process. Different etching rates, selectivities, or mask patterns are used to ensure that the trench and via are formed with their respective required dimensions and depths. This segmented approach within a unified process allows simultaneous formation while maintaining the precision needed for each structure's specific requirements.
Data Source
AI summary
A method for forming a through silicon via for signal and a shielding structure is provided. A substrate is provided and a region is defined on the substrate. A radio frequency (RF) circuit is formed in the region on the substrate. A through silicon trench (TST) and a through silicon via (TSV) are formed simultaneously, wherein the TST encompasses the region to serve as a shielding structure for the RF circuit. A metal interconnection system is formed on the substrate, wherein the metal interconnection system comprises a connection unit that electrically connects the TSV to the RF circuit to provide a voltage signal.