Integrated Wet-Processing Machine for Through Silicon Via Metallization

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Solution Overview

Problem

Current metallization processes for through silicon vias in 3D integrated circuits are costly, time-consuming, and require multiple machines with high vacuum conditions and plasma generation, leading to low yield and complex monitoring needs.

Innovation Solution

A machine and process that perform all metallization steps, including insulating dielectric layer deposition, barrier layer formation, metal filling, and annealing, using wet-processing modules with a chemical bath, reducing the need for vacuum and plasma, and allowing for continuous deposition with excellent adhesion and compliance across various form factors.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional metallization processes using multiple machines with vacuum and plasma are used, then metallization quality is maintained, but manufacturing cost increases, processing time increases, and device complexity increases

Engineering Contradiction:

Improvemetallization qualityVSAvoidprocess complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent combines multiple separate metallization machines (CVD machine, PVD machine, electroplating machine, annealing machine) into a single integrated machine. This single machine performs all metallization steps including dielectric layer deposition, barrier layer formation, metal filling, and annealing, thereby reducing device complexity while maintaining metallization quality through continuous processing without substrate removal between steps

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The single metallization machine is designed with multi-functional capabilities to perform diverse metallization operations. It includes multiple reaction chambers that can sequentially execute CVD, PVD, electroplating, and annealing processes, making one machine universal enough to replace several specialized machines while maintaining process quality

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Manufacturing precision

If conventional metallization processes using multiple machines are used, then metallization quality is maintained, but processing time increases and productivity decreases

Engineering Contradiction:

Improvemetallization qualityVSAvoidprocessing speed

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The integrated metallization machine enables continuous processing by eliminating the need to remove and reposition the substrate between different metallization steps. The substrate remains in the machine while reaction chambers are sequentially activated for CVD, PVD, electroplating, and annealing, maintaining continuous useful action and significantly reducing total processing time while preserving metallization quality

Inventive Principle:

Principle #20Continuity of useful action

3Productivity

If wet-processing with chemical bath is used, then manufacturing cost decreases and productivity increases, but harmful chemical exposure increases

Engineering Contradiction:

Improveprocessing speedVSAvoidchemical exposure

Core Design Contradiction:

ProductivityVSObject-affected harmful factors

Solution Approach 1:

The patent employs an inert atmosphere system that replaces harmful chemical baths with vapor-phase processing. The chemical reactions occur in the vapor phase within sealed reaction chambers, eliminating direct contact between operators and hazardous chemicals while maintaining the benefits of wet-processing methodology for cost-effectiveness and productivity

Inventive Principle:

Principle #39Inert atmosphere (Inert environment)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables rapid, cost-effective metallization of through silicon vias with improved yield and reduced footprint, minimizing chemical solution contact and operator risk, while simplifying monitoring and consumable usage.

Implementation Method 1

depositing an insulating dielectric layer in the cavity... depositing a barrier layer to diffusion of the filling metal

Methodology Applied

Scientific EffectWet-processing deposition: Deposition (physical)

Implementation Method 2

filling the cavity by electrodeposition of metal

Methodology Applied

Scientific EffectElectrodeposition: Electrodeposition

Implementation Method 3

performing annealing of the substrate

Methodology Applied

Scientific EffectAnnealing: Annealing

Data Source

PatentUS10460945B2Machine suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure

Publication Date: 2019.10.29 ALCHIMER SA

AI summary

The invention relates to a machine (1) adapted to metallize a cavity of a semi-conductive or conductive substrate such as a structure of the through silicon via type, according to a metallization process comprising the steps consisting of:a) depositing an insulating dielectric layer in the cavity,b) depositing a barrier layer to diffusion of the filling metal,c) filling the cavity by electrodeposition of metal, preferably copper, andd) carrying out annealing of the substrate,characterized in that it comprises a series of wet-processing modules (10-60) configured to conduct steps a), b) and c) by wet-processing in a chemical bath (B) and at least one additional module (70) adapted to conduct annealing step d) of the substrate (S) such that the machine (1) is capable of executing the entire metallization process of the cavity.