Tunable Charge Pump Frequency Adjustment for Memory Noise

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Solution Overview

Problem

As memory devices increase in size and memory density, the conventional use of charge pumps leads to interference with other circuitry due to high current demands, causing voltage drop noise and inefficiencies, necessitating a solution to dynamically manage charge output.

Innovation Solution

The implementation of tunable charge pumps with programmable oscillators and delay elements allows for dynamic frequency adjustment and even distribution of load across multiple charge pump cores, enabling precise control of charge output based on memory device demands.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional charge pumps are used in high density memory devices, then voltage generation capability is achieved, but interference with other circuitry increases due to high current demands

Engineering Contradiction:
Improvevoltage generation capabilityVSAvoidinterference with other circuitry
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

The charge pump system implements dynamic frequency adjustment through programmable oscillators, allowing the charge pump to adapt its operating frequency based on real-time current demands. This dynamic operation enables the system to reduce current draw during low-demand periods while maintaining voltage generation capability during high-demand periods, thereby reducing interference with other circuitry

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system changes the operating parameters of the charge pump by adjusting the frequency of the programmable oscillator. By varying the frequency parameter, the system can optimize the balance between voltage generation efficiency and current consumption, reducing harmful interference effects while maintaining the necessary power output

Inventive Principle:
Principle #35Parameter changes

2Power

If conventional charge pumps are used in high density memory devices, then voltage supply is provided, but voltage drop noise increases

Engineering Contradiction:
Improvevoltage supplyVSAvoidvoltage drop noise
Core Design Contradiction:
PowerVSObject-generated harmful factors

Solution Approach 1:

The programmable oscillator enables dynamic adjustment of the charge pump frequency to match actual voltage supply demands. This prevents excessive current draw that would cause voltage drops and associated noise, while ensuring adequate voltage supply is maintained when needed by memory circuits

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The system incorporates feedback mechanisms through programmable delay elements that respond to changing current demands. This feedback control allows the charge pump to adjust its operation in real-time, preventing voltage drop noise by maintaining stable voltage supply under varying load conditions

Inventive Principle:
Principle #23Feedback

3Power

If charge pump frequency is increased to meet higher current demands, then power delivery capability improves, but interference with other circuitry worsens

Engineering Contradiction:
Improvepower delivery capabilityVSAvoidinterference with other circuitry
Core Design Contradiction:
PowerVSObject-affected harmful factors

Solution Approach 1:

The system dynamically adjusts the charge pump frequency based on actual current demands rather than operating at a fixed high frequency. The programmable oscillator allows the system to increase frequency only when necessary to meet power delivery requirements, while reducing frequency during low-demand periods to minimize interference with other circuitry

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

By changing the frequency parameter of the charge pump based on real-time conditions, the system optimizes power delivery capability while minimizing harmful interference. The programmable delay elements enable precise parameter adjustment to achieve the optimal balance between power output and interference reduction

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS10418073B1Power noise reduction technique for high density memory with frequency adjustments
Publication Date: 2019.09.17 MICRON TECHNOLOGY INC
  • US10418073B1 patent drawing
  • US10418073B1 patent drawing

AI summary

Memory devices may have internal circuitry that employs voltages higher than voltages provided by an external power source. Charge pumps are DC/DC converters that may be used to generate, internally, higher voltages for operation. The available charge pumps in a memory device may be adjusted through adjustment of the operation frequency of oscillating circuitry that drives the charge pump. Delay elements may also be adjusted to facilitate operation of the charge pump.