Tunable Electromagnetic Field for Semiconductor Wafer Doping Uniformity
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Solution Overview
Problem
Existing semiconductor deposition techniques fail to produce uniform layers on larger wafers, leading to inconsistent performance and yields in semiconductor integrated circuit manufacturing.
Innovation Solution
A tunable electromagnetic field structure is introduced proximate the wafer during the plasma doping process, using a magnetic field manipulation system with adjustable windings and core structures to direct plasma particles uniformly across the wafer surface, enhancing deposition uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If existing deposition techniques are used on larger wafers, then wafer size increases, but layer uniformity deteriorates
Solution Approach 1:
The patent applies local quality by creating a non-uniform magnetic field distribution across the wafer surface, with different field strengths in different regions. The electromagnetic structure is positioned and configured to provide enhanced field strength at the wafer edges compared to the center, locally compensating for the edge effects that cause non-uniform deposition. This localized field modification ensures uniform dopant distribution across the entire wafer surface area.
Solution Approach 2:
The patent employs parameter changes by dynamically adjusting the electromagnetic field parameters (strength, distribution, and configuration) during the deposition process. The system modifies the magnetic field characteristics to counteract the scaling effects that occur with larger wafer sizes, maintaining consistent deposition uniformity across different wafer dimensions by changing the field parameters rather than the physical deposition conditions.
2Productivity
If wafer size increases, then productivity improves, but doping uniformity deteriorates
Solution Approach 1:
The electromagnetic structure creates a locally optimized magnetic field environment that addresses the specific uniformity challenges of large wafer processing. By concentrating field strength where needed (at the edges) and maintaining appropriate field distribution across the entire wafer surface, the system enables high-productivity processing of large wafers while preserving doping uniformity across the expanded area.
Solution Approach 2:
The electromagnetic field structure serves as an intermediary between the plasma source and the wafer surface, mediating the deposition process to achieve uniform dopant distribution. This intermediary magnetic field modifies the trajectories and deposition rates of plasma particles, ensuring that even on large wafers where direct line-of-sight deposition would be non-uniform, the intermediate magnetic field guidance maintains consistent doping across the entire wafer surface, thereby enabling high productivity without sacrificing uniformity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution achieves more consistent and uniform dopant distribution on semiconductor wafers, resulting in improved device performance and increased yields by overriding existing electromagnetic fields and adjusting the magnetic field to ensure uniform particle deposition.
Implementation Method 1
adjusting a magnetic field above the semiconductor wafer by controlling a current flowing through an electromagnetic structure contained within the doping chamber and surrounding the semiconductor wafer
Implementation Method 2
controlling a current flowing through an electromagnetic structure contained within the doping chamber and surrounding the semiconductor wafer
Implementation Method 3
generating a plasma within the doping chamber to accelerate dopants toward the semiconductor wafer
Implementation Method 4
accelerate ions or other particulars toward the surface of a wafer undergoing the deposition process
Data Source
AI summary
A method includes receiving a semiconductor wafer into a chamber; generating a plasma within the chamber to accelerate particles toward the semiconductor wafer; generating a magnetic field above the semiconductor wafer by an electromagnetic structure contained within the chamber, wherein the electromagnetic structure comprises a plurality of electromagnetic elements; and adjusting the magnetic field, wherein the adjusting of the magnetic field includes moving positions of each of the plurality of electromagnetic elements independently.