Ridge-Stripe Tunable Laser With Electric-Field Control for High Output

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Solution Overview

Problem

Existing semiconductor laser devices used in pumping lasers for optical fiber amplifiers face challenges in achieving high power output while maintaining low power consumption, leading to increased heat generation and reduced efficiency.

Innovation Solution

The introduction of an electric-field-distribution-control layer between the separate confinement heterostructure layer and the n-type cladding layer in the semiconductor laser element, configured with semiconductor layers having band gap energy greater than the barrier layer, reduces optical electric field distribution and inter valence band absorption, enhancing external differential quantum efficiency and allowing for high power output operation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If semiconductor laser devices are used in pumping lasers for optical fiber amplifiers, then high power output is achieved, but power consumption increases and heat generation increases

Engineering Contradiction:

Improvepower outputVSAvoidpower consumption

Core Design Contradiction:

PowerVSUse of energy by moving object

Solution Approach 1:

The patent changes the band gap energy parameter of the semiconductor layers in the electric-field-distribution-control layer to be greater than that of the barrier layer. This parameter change modifies the optical electric field distribution and reduces inter valence band absorption, thereby improving external differential quantum efficiency and reducing power consumption while maintaining high power output capability

Inventive Principle:

Principle #35Parameter changes

2Power

If semiconductor laser devices are used in pumping lasers for optical fiber amplifiers, then high power output is achieved, but heat generation increases

Engineering Contradiction:

Improvepower outputVSAvoidheat generation

Core Design Contradiction:

PowerVSTemperature

Solution Approach 1:

By changing the band gap energy parameter of the control layer semiconductor layers to be greater than the barrier layer, the patent reduces inter valence band absorption and improves external differential quantum efficiency. This reduces non-radiative recombination and heat generation, enabling high power output with reduced thermal saturation

Inventive Principle:

Principle #35Parameter changes

3Power

If semiconductor laser devices are used in pumping lasers for optical fiber amplifiers, then high power output is achieved, but efficiency decreases

Engineering Contradiction:

Improvepower outputVSAvoidefficiency

Core Design Contradiction:

PowerVSLoss of energy

Solution Approach 1:

The patent changes the band gap energy parameter of the control layer to be greater than the barrier layer, which reduces inter valence band absorption losses. This parameter change improves external differential quantum efficiency by reducing non-radiative recombination, thereby reducing energy loss and improving overall efficiency while maintaining high power output

Inventive Principle:

Principle #35Parameter changes

4Power

If active layer width is increased, then power output is enhanced, but thermal saturation increases

Engineering Contradiction:

Improvepower outputVSAvoidthermal saturation

Core Design Contradiction:

PowerVSTemperature

Solution Approach 1:

By changing the band gap energy parameter of the control layer semiconductor layers to be greater than the barrier layer, the patent reduces inter valence band absorption and improves external differential quantum efficiency. This allows for wider active layer widths that enhance power output while the improved efficiency reduces thermal saturation effects

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration enables the semiconductor laser to achieve higher power output with reduced power consumption, minimizing thermal saturation and maintaining single transverse mode operation even with wider active layer widths, thus improving the efficiency and reliability of the laser device.

Implementation Method 1

reduces optical electric field distribution and inter valence band absorption, enhancing external differential quantum efficiency

Methodology Applied

Scientific EffectInter valence band absorption: Absorption (EM radiation)

Data Source

PatentUS12327983B2Wavelength-variable laser

Publication Date: 2025.06.10 FURUKAWA ELECTRIC CO LTD

AI summary

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.