Tunable Laser Layout Using Multi-Gain Chips for Wide Wavelength Range
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing wavelength tunable laser devices face challenges in miniaturization while expanding the wavelength range of emitted light, leading to increased device size.
Innovation Solution
A wavelength tunable laser device is designed with a substrate and multiple III-V group compound semiconductor elements bonded on optical waveguides, where the semiconductor elements have different peak optical gain wavelengths, allowing for miniaturization by integrating multiple elements and using selectors and reflectors to control light propagation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple semiconductor elements are integrated to expand wavelength range, then wavelength coverage is improved, but device size increases
Solution Approach 1:
Multiple semiconductor elements with different peak optical gain wavelengths are integrated onto a single substrate and bonded to optical waveguides, combining their functions into one compact device to achieve wide wavelength coverage without proportionally increasing device size
Solution Approach 2:
The substrate serves multiple functions by simultaneously supporting multiple semiconductor elements with different wavelength characteristics, allowing the single device to cover a broad wavelength range from 1520 nm to 1580 nm and beyond
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device achieves miniaturization while enabling efficient emission of light across a wide wavelength range, with the ability to vary wavelengths by 10 nm or more, effectively covering the C-band and beyond.
Implementation Method 1
The semiconductor elements are formed of a III-V group compound semiconductor and have optical gains. Wavelengths with which the optical gains of the plurality of semiconductor elements reach peaks differ from one another.
Data Source
AI summary
A wavelength tunable laser device includes a substrate, a plurality of first optical waveguides provided in the substrate, and a plurality of semiconductor elements bonded on a surface of the substrate and on the plurality of first optical waveguides. The semiconductor elements are formed of a III-V group compound semiconductor and have optical gains. Wavelengths with which the optical gains of the plurality of semiconductor elements reach peaks differ from one another.