Tunable Laser Using Vernier Effect for Wide Tunability

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Solution Overview

Problem

The manufacturing of hybrid lasers is challenging due to the incompatibility between III-V semiconductor and silicon production lines, making it difficult to produce tunable lasers with wide tunability, high side mode suppression ratio, small footprint, and simple fabrication.

Innovation Solution

A tunable laser is developed using III-V semiconductor materials on a single chip, where the laser cavities are formed without a silicon waveguide, utilizing a structure with III-V waveguides of different widths and refractive index layers to achieve precise wavelength tuning through the Vernier effect, allowing for continuous or discrete wavelength variation over a significant range.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If hybrid lasers are manufactured using both III-V semiconductor and silicon production lines, then the laser can achieve wide tunability and high performance, but the manufacturing process becomes complex and incompatible

Engineering Contradiction:
Improvetunability rangeVSAvoidmanufacturing process complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent merges the gain section function and waveguide function into a single III-V semiconductor waveguide structure. The waveguide includes a core region with gain medium and cladding regions, eliminating the need for separate hybrid integration of III-V and silicon components. This integration resolves the manufacturing complexity while maintaining wide tunability through the Vernier effect using two laser cavities with different effective refractive indices.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The III-V semiconductor waveguide is designed to perform multiple functions simultaneously: it serves as the gain medium, the optical waveguide, and the structural element for achieving Vernier tuning. This multi-functionality eliminates the need for separate silicon waveguide components, simplifying the manufacturing process while achieving the desired performance characteristics.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Reliability

If hybrid lasers integrate III-V and silicon sections, then performance requirements can be met, but separate processing of different materials is required

Engineering Contradiction:
Improveside mode suppression ratioVSAvoidfabrication simplicity
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent uses homogeneous III-V semiconductor material throughout the waveguide structure, eliminating the need for heterogeneous integration of silicon and III-V sections. The waveguide core and cladding are both formed from III-V materials with different refractive indices, allowing single-material fabrication processes while achieving high side mode suppression ratio through precise control of the Vernier effect.

Inventive Principle:
Principle #33Homogeneity

3Adaptability or versatility

If tunable lasers are designed with wide tunability, then wavelength range increases, but device footprint and complexity increase

Engineering Contradiction:
Improvewavelength tuning rangeVSAvoiddevice footprint
Core Design Contradiction:
Adaptability or versatilityVSArea of moving object

Solution Approach 1:

The patent employs dynamic wavelength tuning through the Vernier effect by adjusting the injection currents in two laser cavities with different effective refractive indices. This dynamic control mechanism enables wide wavelength tuning range without requiring physically large device structures, as the tuning is achieved through electrical control of the cavity resonance conditions rather than mechanical adjustment of large components.

Inventive Principle:
Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the production of tunable lasers with a wide range of tunability, high side mode suppression ratio, and a small footprint, simplifying the manufacturing process by eliminating the need for separate processing of III-V and silicon sections, and allowing for efficient mass production.

Implementation Method 1

utilizing a structure with III-V waveguides of different widths and refractive index layers to achieve precise wavelength tuning through the Vernier effect, allowing for continuous or discrete wavelength variation over a significant range

Methodology Applied
Scientific EffectVernier effect:

Data Source

PatentUS11177624B2Tunable laser
Publication Date: 2021.11.16 HEWLETT PACKARD ENTERPRISE DEV LP
  • US11177624B2 patent drawing
  • US11177624B2 patent drawing
  • US11177624B2 patent drawing

AI summary

Examples of the present disclosure include a tunable laser comprising a waveguide including gain section. The waveguide overlies and is optically coupled to another waveguide. The another waveguide has a reflector at one end. A laser cavity is formed in the waveguides.