Tunable Resistor with Curved Elements in Interconnect Dielectric

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Solution Overview

Problem

Existing methods for embedding thin film resistors in semiconductor devices are complex, expensive, and suffer from topography issues and variations in sheet resistivity, limiting design flexibility and tuning precision.

Innovation Solution

A semiconductor structure with a tunable resistor structure featuring curved resistor elements embedded in an interconnect dielectric material, where the resistivity is controlled through a doped metallic insulator layer and a controlled surface treatment process, resulting in a concave outermost surface and an interconnect dielectric material embedding the resistor structure.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If thin film resistors are embedded in interconnect dielectric material using prior art methods, then the resistor structure is formed, but the manufacturing process becomes complicated and expensive

Engineering Contradiction:

Improveresistor structure formationVSAvoidmanufacturing process complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The invention extracts the resistor formation process from the complex embedded thin film resistor methodology. By using a doped metallic insulator layer that is already present in the interconnect structure and selectively converting portions to conductive resistive material through surface treatment, the patent eliminates the need for separate thin film resistor deposition and embedding processes, thereby simplifying manufacturing while maintaining reliability

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The doped metallic insulator layer serves multiple functions: it acts as an insulator in regions where isolation is needed, and can be selectively converted to conductive resistive material in regions where resistors are required. This multi-functionality eliminates the need for separate resistor material deposition processes, reducing manufacturing complexity while ensuring reliable resistor formation

Inventive Principle:

Principle #6Universality (Multi-functionality)

2Reliability

If thin film resistors are embedded in interconnect dielectric material, then the resistor structure is formed, but topography issues arise that may degrade chip yield

Engineering Contradiction:

Improveresistor structure formationVSAvoidchip yield

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The invention applies local quality by selectively converting specific portions of the doped metallic insulator layer to conductive resistive material through controlled surface treatment. This localized conversion allows resistor formation only where needed, maintaining planar topography in other areas and avoiding the widespread topography issues that degrade chip yield

Inventive Principle:

Principle #3Local quality

3Reliability

If thin film metal resistors are embedded in MOL dielectric material, then the resistor structure is formed, but variation of sheet resistivity and tuning precision occur

Engineering Contradiction:

Improveresistor structure formationVSAvoidsheet resistivity control

Core Design Contradiction:

ReliabilityVSManufacturing precision

Solution Approach 1:

The invention utilizes parameter changes by controlling the depth and extent of surface treatment applied to the doped metallic insulator layer. By adjusting surface treatment parameters such as etch depth, plasma power, or chemical concentration, the resistivity of the converted resistive material can be precisely tuned to desired values, eliminating sheet resistivity variation and improving manufacturing precision

Inventive Principle:

Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach provides a semiconductor structure with design flexibility and controlled resistivity, addressing the complexity and precision issues of prior art methods by enabling tunable resistivity and improved chip yield.

Implementation Method 1

A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material

Methodology Applied

Scientific EffectOxidation: Oxidation

Implementation Method 2

Methodology Applied

Scientific EffectNitridation: Nitriding

Data Source

PatentUS10211280B2Method of forming tunable resistor with curved resistor elements

Publication Date: 2019.02.19 INTERNATIONAL BUSINESS MACHINE CORPORATION

AI summary

A resistor structure is provided that contains curved resistor elements. The resistor structure is embedded within an interconnect dielectric material and the resistivity of an electrical conducting resistive material of the resistor structure can be tuned to a desired resistivity during the manufacturing of the resistor structure. Notably, an electrical conducting metallic structure having a concave outermost surface is provided in a dielectric material layer. A doped metallic insulator layer is formed on the concave outermost surface of the metallic structure. A controlled surface treatment process is then performed to an upper portion of the doped metallic insulator layer to convert the upper portion of the doped metallic insulator layer into an electrical conducting resistive material. An interconnect dielectric material can then be formed to embed the entirety of the remaining doped metallic insulator layer and the electrical conducting resistive material.