Tungsten CMP Slurry Composition for High Rate and Low Corrosion
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Solution Overview
Problem
Current chemical mechanical polishing (CMP) compositions for tungsten pattern wafers face challenges in maintaining high polishing rates while improving recess characteristics and minimizing corrosion rates.
Innovation Solution
A CMP slurry composition incorporating a solvent, an abrasive agent, and dendritic poly(amidoamine) with terminal functional groups having a pKa of about 6 or less, such as carboxyl or sulfonate groups, is used, along with optional oxidizing agents, catalysts, and organic acids to enhance polishing efficiency and reduce corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional CMP compositions are used to maintain high polishing rates, then polishing efficiency is improved, but recess characteristics deteriorate and corrosion rates increase
Solution Approach 1:
The patent changes the chemical parameters of the CMP slurry by incorporating dendritic poly(amidoamine) with specific terminal functional groups having pKa of about 6 or less. This modifies the chemical environment to achieve selective removal of tungsten while improving recess characteristics and reducing corrosion, thereby resolving the contradiction between polishing rate and manufacturing precision
Solution Approach 2:
The patent uses a composite slurry composition containing dendritic poly(amidoamine) combined with abrasive particles and other chemical additives. This composite formulation enables simultaneous achievement of high polishing rate through mechanical action and improved recess characteristics through controlled chemical reactions, resolving the contradiction between productivity and manufacturing precision
2Productivity
If conventional CMP compositions are used to maintain high polishing rates, then polishing efficiency is improved, but corrosion rates increase
Solution Approach 1:
The patent modifies the chemical parameters of the slurry by using dendritic poly(amidoamine) with terminal functional groups of specific pKa values. This creates a controlled chemical environment that enables efficient tungsten removal while minimizing harmful corrosion effects on the wafer structure, resolving the contradiction between polishing rate and corrosion rate
3Manufacturing precision
If dendritic poly(amidoamine) with terminal functional groups of pKa about 6 or less is added to improve recess characteristics and reduce corrosion, then manufacturing precision is improved, but polishing rate may decrease
Solution Approach 1:
The patent creates a composite slurry system that combines dendritic poly(amidoamine) with abrasive particles and chemical additives. The abrasive component maintains high polishing rate through mechanical action, while the dendritic poly(amidoamine) provides controlled chemical reactions to improve recess characteristics, thereby resolving the contradiction between manufacturing precision and productivity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively improves recess characteristics and reduces corrosion rates of tungsten pattern wafers while maintaining a high polishing rate, as demonstrated by comparative examples showing improved performance with the inclusion of dendritic poly(amidoamine).
Implementation Method 1
a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less
Implementation Method 2
an abrasive agent
Data Source
AI summary
A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the composition comprising a solvent; an abrasive agent; and a dendritic poly(amidoamine) containing a terminal functional group that has a pKa of about 6 or less.