CMP Slurry for Tungsten Flatness and Corrosion
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Solution Overview
Problem
Current CMP compositions for polishing patterned tungsten wafers face challenges in maintaining flatness, reducing polishing rate reduction, and minimizing corrosion, particularly due to limitations in the use of dendrimeric structures and other additives.
Innovation Solution
A CMP slurry composition incorporating a non-dendrimeric poly(amidoamine) with a random hyperbranched structure, along with an abrasive and an oxidant, is used to improve flatness and reduce corrosion of patterned tungsten wafers, while maintaining a high polishing rate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If dendrimeric structures are used in CMP composition, then corrosion resistance is improved, but polishing rate is reduced
Solution Approach 1:
The patent extracts the essential protective function of dendrimeric structures by using only small amounts of non-dendrimeric poly(amidoamine) instead of large amounts of dendrimeric structures, thereby achieving corrosion resistance without the severe polishing rate reduction associated with dendrimeric additives
Solution Approach 2:
The patent changes the chemical structure parameter from dendrimeric to non-dendrimeric poly(amidoamine) and optimizes the concentration parameter to 0.01-5 wt%, achieving a balance between corrosion protection and polishing efficiency
2Productivity
If conventional CMP composition is used, then polishing rate is maintained, but flatness is poor
Solution Approach 1:
The patent creates a composite CMP composition containing abrasive particles, non-dendrimeric poly(amidoamine), oxidant, and other additives that work synergistically to achieve both high polishing rate and excellent flatness, overcoming the limitations of conventional single-function compositions
3Reliability
If high concentration of additives is used, then corrosion resistance is improved, but polishing rate reduction increases
Solution Approach 1:
The patent uses small amounts of non-dendrimeric poly(amidoamine) that provides effective corrosion protection without the long-term performance degradation and polishing rate reduction associated with high concentrations of dendrimeric structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition effectively improves the flatness of patterned tungsten wafers, minimizes the reduction in polishing rate, and reduces corrosion, as demonstrated by improved polishing characteristics and reduced tungsten corrosion rates compared to comparative examples.
Implementation Method 1
a non-dendrimeric poly(amidoamine) which may help improve flatness of patterned tungsten wafers, minimize reduction in polishing rate with respect to patterned tungsten wafers, and reduce corrosion of patterned tungsten wafers
Implementation Method 2
a metal layer polishing process using a CMP composition may include polishing only an initial metal layer
Implementation Method 3
A composition for polishing a metal layer (e.g., tungsten) on a semiconductor substrate may include abrasive particles suspended in an aqueous solution
Implementation Method 4
a chemical accelerator, such as an oxidant and a catalyst in the aqueous solution
Data Source
AI summary
A CMP slurry composition for patterned tungsten wafers and a method of polishing patterned tungsten wafers using the same, the CMP slurry composition includes a solvent; an abrasive; and a non-dendrimeric poly(amidoamine).