Semiconductor Treatment Liquid for Tungsten CMP
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Solution Overview
Problem
Current treatment liquids for semiconductor substrates after chemical mechanical polishing (CMP) treatments have poor storage stability, anticorrosion properties for tungsten, and cleanability, leading to potential short-circuits and electrical characteristic degradation.
Innovation Solution
A treatment liquid comprising an amphoteric compound with an acid group pKa less than 4.5 and a basic group pKa greater than 4.5, an antimicrobial agent, and an amino alcohol, with specific pH and mass ratio configurations, is used to enhance storage stability, anticorrosion properties, and cleanability for semiconductor substrates with tungsten.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If conventional treatment liquids are used for cleaning semiconductor substrates after CMP treatment, then cleaning function is provided, but storage stability is poor and mold/bacteria generation occurs
Solution Approach 1:
The patent changes the chemical parameters of the treatment liquid by incorporating specific amphoteric compounds with controlled pKa values (acid group pKa < 4.5, basic group pKa > 4.5) and specific antimicrobial agents. This parameter optimization resolves the contradiction by creating a chemical environment that is both effective for cleaning and inhibitive to microbial growth, thereby improving storage stability while preventing mold and bacteria generation.
Solution Approach 2:
The patent creates a composite treatment liquid system combining amphoteric compounds, amino alcohols, and antimicrobial agents in specific compositions. This composite approach allows the treatment liquid to simultaneously achieve cleaning functionality and microbial inhibition, resolving the contradiction between providing cleaning function and preventing harmful biological factors during storage.
2Reliability
If conventional treatment liquids are used, then cleaning is performed, but anticorrosion properties for tungsten are poor
Solution Approach 1:
The patent optimizes the chemical parameters by selecting amphoteric compounds with specific pKa ranges and controlling the basicity-to-acidity group ratio. These parameter changes create a buffered chemical environment that protects tungsten from corrosion while maintaining cleaning effectiveness, thereby improving reliability through enhanced anticorrosion properties.
Solution Approach 2:
The amphoteric compounds act as intermediary substances that mediate between the cleaning function and the protection of tungsten. By having both acidic and basic groups with specific pKa values, these compounds can interact with tungsten surfaces to prevent corrosion while still enabling effective cleaning, thus resolving the contradiction between cleaning and anticorrosion requirements.
3Manufacturing precision
If conventional treatment liquids are used, then cleaning function is provided, but cleanability for tungsten is poor
Solution Approach 1:
The patent changes the chemical parameters by incorporating amino alcohols and optimizing the composition ratios of amphoteric compounds. These parameter adjustments enhance the treatment liquid's ability to effectively remove residues from tungsten surfaces, thereby improving manufacturing precision through better cleanability while maintaining effective residue removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The treatment liquid provides excellent storage stability, anticorrosion properties, and cleanability for semiconductor substrates with tungsten, reducing the risk of short-circuits and improving electrical characteristics.
Implementation Method 1
an amphoteric compound; the amphoteric compound includes an acid group having a pKa of less than 4.5 and a basic group having a pKa of more than 4.5, and the number of the basic groups is larger than the number of the acid groups
Implementation Method 2
the amphoteric compound includes an acid group having a pKa of less than 4.5 and a basic group having a pKa of more than 4.5
Implementation Method 3
an antimicrobial agent; in a case where a treatment liquid for a semiconductor substrate is stored, generation of molds and bacteria in the treatment liquid can be suppressed
Implementation Method 4
an amino alcohol; excellent anticorrosion properties of tungsten
Data Source
AI summary
An object of the present invention is to provide a treatment liquid for a semiconductor substrate, which has excellent storage stability, excellent anticorrosion properties of tungsten, and excellent cleanability for a semiconductor substrate having tungsten after a CMP treatment. The treatment liquid for a semiconductor substrate according to an embodiment of the present invention includes an amphoteric compound, an antimicrobial agent, and an amino alcohol, in which the amphoteric compound includes an acid group having a pKa of less than 4.5 and a basic group having a pKa of more than 4.5, and the number of the basic groups is larger than the number of the acid groups.