Tungsten Control Gate Structure for Lower-Resistance Memory Cells
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Solution Overview
Problem
Existing memory devices face challenges in structuring control gates to achieve a balance or optimal combination of device operations and resistance, particularly in achieving optimal control gate resistance for improved device performance.
Innovation Solution
The use of tungsten structures for control gates in memory devices, which offer a relatively low resistance to enhance device operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional control gate structures are used, then device operations can be maintained, but control gate resistance remains high which limits performance optimization
Solution Approach 1:
The patent changes the material parameter of the control gate from conventional materials to tungsten, which has inherently lower electrical resistance. This material substitution directly addresses the contradiction by maintaining device operational reliability while reducing the harmful effect of high control gate resistance, thereby improving overall device performance.
Solution Approach 2:
The patent employs composite material structures in the control gate, specifically using tungsten in combination with other materials to achieve both low resistance and operational reliability. The composite structure allows optimization of electrical properties while maintaining the functional requirements for device operations.
2Productivity
If control gate structure is optimized for low resistance, then device performance improves, but achieving optimal balance between operations and resistance becomes challenging
Solution Approach 1:
By changing the fundamental material parameter to tungsten, the patent achieves low resistance without requiring complex structural modifications. This straightforward material substitution approach improves device performance while avoiding the complexity that would arise from attempting to optimize conventional materials through intricate structural designs.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The tungsten structures improve the operational efficiency and performance of memory devices by reducing control gate resistance, thereby optimizing device operations.
Implementation Method 1
The tungsten structure can have a relatively low resistance to improve operation of the memory device
Data Source
AI summary
Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a first dielectric material; a second dielectric material separated from the first dielectric material; a memory cell string including a pillar extending through the first and second dielectric materials, the pillar including a portion between the first and second dielectric materials; and a tungsten material located between the first and second dielectric materials and separated from the portion of the pillar and the first and second dielectric materials by an additional dielectric material. The additional dielectric material has a dielectric constant greater than a dielectric constant of silicon dioxide. The additional dielectric material contacts the portion of the pillar and the tungsten material.