Tungsten Oxide Surface Treatment for Uniform Etch Stop Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing methods for manufacturing semiconductor devices face challenges in achieving a uniform thickness for the etch stop layer, which can lead to defects and reduced adhesion properties.
Innovation Solution
A method involving the formation of tungsten patterns, followed by the creation of a preliminary tungsten oxide layer and subsequent surface plasma treatment using CO or hydrogen plasma to form a tungsten oxide layer and a protective layer, which allows for the formation of an etch stop layer with improved uniformity and adhesion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional method is used to form the etch stop layer directly on the conductive structure, then the process is simple, but the thickness uniformity is poor leading to defects
Solution Approach 1:
A preliminary tungsten oxide layer is formed on the conductive structure before forming the etch stop layer. This preliminary layer serves as an intermediate structure that improves the uniformity of the etch stop layer thickness. The preliminary action of forming this oxide layer creates a more uniform surface for subsequent etch stop layer deposition, resolving the thickness uniformity issue without significantly complicating the overall process.
Solution Approach 2:
The surface of the preliminary tungsten oxide layer undergoes plasma treatment to modify its physical and chemical properties. This parameter change in surface characteristics (through plasma exposure) enhances the uniformity and adhesion properties, allowing the etch stop layer to be formed with better thickness control. The plasma treatment alters surface energy and morphology, creating optimal conditions for uniform etch stop layer formation.
2Reliability
If the etch stop layer is formed with non-uniform thickness, then the process is faster, but defects occur between the conductive structure and contact plug
Solution Approach 1:
The preliminary tungsten oxide layer is formed as an intermediate structure before the etch stop layer. This preliminary layer acts as a buffer and adhesion promoter, ensuring reliable bonding between the conductive structure and the etch stop layer. By preparing this intermediate layer first, the method prevents defects that would otherwise occur with direct formation, improving both reliability and thickness uniformity simultaneously.
Solution Approach 2:
The preliminary tungsten oxide layer serves as an intermediary between the conductive structure and the etch stop layer. This intermediate layer improves interfacial adhesion and provides a more uniform surface for etch stop layer deposition. The mediator layer resolves the conflict between achieving uniform thickness and preventing defects by creating a transition zone that satisfies both requirements.
3Manufacturing precision
If plasma treatment is performed on the preliminary tungsten oxide layer, then the adhesion and uniformity are improved, but the process time increases
Solution Approach 1:
Plasma treatment is applied to the preliminary tungsten oxide layer to modify its surface parameters (energy, morphology, composition). This parameter change enhances the uniformity and adhesion properties, enabling the etch stop layer to be formed with better thickness control. The plasma process, while adding time, creates necessary surface conditions that prevent defects and improve overall manufacturing precision.
Solution Approach 2:
The plasma treatment is performed as a preliminary step before forming the etch stop layer. By preparing the surface in advance through plasma exposure, the subsequent etch stop layer formation proceeds more uniformly and with fewer defects. The preliminary plasma treatment invests time upfront to prevent rework or defects later, ultimately improving process efficiency and precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves a more uniform thickness for the etch stop layer, reducing defects and enhancing the adhesion property, thereby improving the manufacturing process of semiconductor devices.
Implementation Method 1
performing a first surface plasma treatment on the preliminary tungsten oxide layer to remove at least a portion of the preliminary tungsten oxide layer
Data Source
AI summary
A method for manufacturing a semiconductor device. The method may include forming an insulating interlayer on a substrate, forming tungsten patterns inside and on the insulating interlayer, forming an insulation pattern on the insulating interlayer to fill a space between the tungsten patterns, and the insulation pattern having a lowest point of an upper surface lower than an upper surface of each of the tungsten patterns, forming a preliminary tungsten oxide layer on the upper surface of each of the tungsten patterns, performing a first surface plasma treatment on the preliminary tungsten oxide layer to remove at least a portion of the preliminary tungsten oxide layer to form a tungsten oxide layer and a protective layer on the tungsten oxide layer, and forming an etch stop layer on the protective layer and the insulation pattern.