Tungsten Oxide Separation Layer for Flexible Semiconductor Transfer
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Solution Overview
Problem
Current methods for manufacturing flexible semiconductor devices using organic electroluminescence face challenges such as cracking due to bending, impurity blocking, and high capital investment in equipment, particularly in the separation and transfer of semiconductor elements from glass substrates to flexible resin films, which require efficient and reliable low-temperature processes.
Innovation Solution
A method involving the formation of a separation layer with a tungsten oxide film using N2O plasma, followed by the application of a buffer layer containing hydrogen, allowing for the detachment of semiconductor elements like polysilicon transistors from glass substrates and their transfer to resin films using physical force and liquid absorption, with optional impurity addition for enhanced separation and reduced stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon oxide film or silicon film separation layer is removed by wet etching or dry etching, then separation can be achieved, but the process requires high capital investment in specialized equipment and complex manufacturing steps
Solution Approach 1:
The patent introduces a tungsten oxide film as an intermediary separation layer between the glass substrate and the semiconductor element. This mediator layer enables separation through selective adhesion changes - initially adhering strongly to both surfaces, then allowing controlled detachment when a buffer layer is introduced, thereby avoiding complex etching equipment while achieving reliable separation
Solution Approach 2:
The patent changes the adhesion parameters of the separation layer by introducing a buffer layer containing hydrogen. The buffer layer modifies the chemical and physical properties at the interface, transforming the strong adhesion state into a separable state through controlled chemical reactions and stress changes, enabling separation without specialized etching equipment
2Adaptability or versatility
If semiconductor elements are transferred from glass substrates to flexible resin films, then flexible devices can be manufactured, but cracking occurs due to bending stress
Solution Approach 1:
The patent applies preliminary action by forming a buffer layer containing hydrogen before the separation process. This buffer layer pre-compensates for stress by introducing hydrogen atoms that reduce internal stresses in the semiconductor element, thereby preventing crack formation when the device is later bent or flexed
Solution Approach 2:
The patent applies local quality by selectively treating the separation layer and buffer layer regions with specific chemical compositions and structures. The buffer layer is specifically designed with hydrogen-containing compounds that locally address stress concentration points in the semiconductor element, providing targeted protection against cracking while maintaining overall device flexibility
3Ease of manufacture
If low-temperature processes are used for manufacturing, then equipment costs are reduced, but separation and transfer reliability may be compromised
Solution Approach 1:
The patent changes the chemical parameters of the separation layer and buffer layer to enable separation at low temperatures. By selecting specific materials for the tungsten oxide film and buffer layer that undergo controlled adhesion changes at lower temperatures, the process achieves reliable separation without requiring high-temperature equipment, thereby reducing manufacturing costs while maintaining separation effectiveness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of bendable semiconductor devices with reduced cracking and improved reliability, while minimizing equipment costs by utilizing existing glass substrate manufacturing processes and ensuring effective barrier layers for impurity protection.
Implementation Method 1
an inorganic film such as a tungsten film, adhesion can be relatively high at the time of deposition. After that, a separation trigger is formed; then, cleavage occurs therefrom
Implementation Method 2
a tungsten oxide film, which is tightly anchored by N2O plasma
Implementation Method 3
when a bond of M-O—W (M is a given element) is divided by application of physical force, a liquid is absorbed into the gap, whereby the bond becomes bonds of M-OH HO—W with a longer bond distance
Data Source
AI summary
An object is to provide a novel separation method or a novel manufacturing method of a device. In the case where a bond of M-O—W (M is a given element) is divided by application of physical force, a liquid is absorbed into the gap, whereby the bond becomes bonds of M-OH HO—W with a longer bond distance and the detachment can be promoted accordingly. In the detachment, a roller such as a drum roller can be used. Part of the roller surface may have adhesiveness. For example, an adhesive tape or the like may be put on part of the roller surface. By rotating the roller, the layer to be separated is wound and detached from the substrate having an insulating surface.