Peeling Layer Tungsten Oxide Nitrogen Compound Flexible Semiconductor
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Solution Overview
Problem
The existing methods for manufacturing flexible semiconductor devices face challenges with low peelability, leading to high stress on semiconductor elements during peeling from support substrates, which can result in breakage and reduced yield.
Innovation Solution
A peeling method involving the formation of a peeling layer with tungsten, sequential layers of silicon oxynitride and silicon nitride, and a tungsten oxide layer, followed by heat treatment to create a compound with tungsten and nitrogen, and plasma treatment with dinitrogen monoxide, to enhance peelability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a peeling layer with tungsten and oxide layer with tungsten oxide is formed to enable peeling, then peelability is improved, but the device structure becomes more complex
Solution Approach 1:
The peeling structure is segmented into multiple functional layers: a peeling layer containing tungsten, an oxide layer containing tungsten oxide, a first layer containing silicon oxynitride, and a second layer containing silicon nitride. This segmentation allows each layer to perform its specific function (peeling, adhesion control, stress management) while collectively solving the peeling problem without requiring complete structural redesign
Solution Approach 2:
The peeling layer and oxide layer are formed in advance before the semiconductor element is fully processed. The heat treatment is also performed preliminarily to form the compound containing tungsten and nitrogen in the oxide layer. These preliminary actions prepare the structure for easy peeling without damaging the semiconductor element during the transfer process
2Ease of operation
If heat treatment is performed to create compound containing tungsten and nitrogen, then peelability is improved, but manufacturing process time increases
Solution Approach 1:
The heat treatment process changes the chemical composition and bonding characteristics of the oxide layer by forming a compound containing tungsten and nitrogen. This parameter change (chemical composition) fundamentally improves peelability. The treatment is optimized to achieve the necessary compound formation in a controlled time frame, balancing peelability improvement with manufacturing efficiency
3Ease of operation
If plasma treatment with dinitrogen monoxide is applied to enhance peelability, then peelability is improved, but manufacturing complexity increases
Solution Approach 1:
Dinitrogen monoxide plasma is used as an intermediary treatment to modify the surface properties of the oxide layer. The plasma treatment introduces nitrogen-containing groups or modifies the surface chemistry, enhancing the peeling characteristics. This intermediary treatment is applied selectively to the peeling structure rather than the entire device, minimizing overall process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method improves peelability, increases yield, and results in a highly reliable semiconductor device with a flexible substrate by reducing mechanical stress and adhesion, allowing for successful transfer without damage.
Implementation Method 1
a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment
Implementation Method 2
a fifth step of performing plasma treatment on a surface of the peeling layer in an atmosphere containing dinitrogen monoxide
Implementation Method 3
The separation layer is ablated by laser light irradiation, so that peeling is generated in the separation layer
Data Source
AI summary
To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.