Tungsten Plug Layout in Semiconductor Substrates for Warpage Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in optimizing current control and improving electrical characteristics, particularly in preventing defective formation of plugs and reducing stress-induced warpage, while maintaining reliable electrical connections.
Innovation Solution
The semiconductor device incorporates a design with plugs that have varying lengths in the X and Y directions, spaced apart in the Y direction, and are made of tungsten with a barrier metal to enhance adhesion, along with a layout that optimizes current density and heat dissipation, thereby improving embeddability and reducing switching losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If plugs are formed by embedding tungsten in openings excavated by etching, then electrical connection between electrode and semiconductor substrate is achieved, but defective formation of plugs occurs and stress-induced warpage increases
Solution Approach 1:
The plug structure is segmented into multiple materials with different lengths: a first plug portion made of tungsten and a second plug portion made of a different material. This segmentation allows each portion to serve different functions - the tungsten portion provides electrical connection while the other material compensates for stress, thereby preventing defective formation and warpage.
Solution Approach 2:
The invention uses composite materials in the plug structure, combining tungsten with another material that has different stress characteristics. This composite approach enables the plug to simultaneously achieve good embeddability, electrical conductivity, and stress balance, resolving the contradiction between formation reliability and manufacturing precision.
2Ease of manufacture
If conventional plug structures are used, then manufacturing process is simple, but stress-induced warpage occurs and electrical characteristics deteriorate
Solution Approach 1:
The invention changes the material parameter of the plug structure by introducing a second material with different stress characteristics. This parameter change allows the plug to compensate for stress-induced warpage while maintaining a manufacturing process that is still based on conventional embedding techniques, thus balancing ease of manufacture with substrate stability.
3Ease of manufacture
If uniform plug layout is used, then manufacturing is straightforward, but current control and heat dissipation are suboptimal
Solution Approach 1:
The plug layout transitions from uniform to non-uniform distribution, with different regions having different plug densities. This local quality variation optimizes current control and heat dissipation in different areas of the semiconductor device, improving electrical performance while maintaining reasonable manufacturing simplicity through standardized plug structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the reliability of the semiconductor device by preventing plug defects, reducing stress-induced warpage, and optimizing current control, leading to improved electrical performance and reduced power consumption.
Implementation Method 1
made of tungsten with a barrier metal to enhance adhesion
Data Source
AI summary
A semiconductor device includes a semiconductor substrate, an interlayer insulating film that is provided on the semiconductor substrate, a first electrode that is provided on the interlayer insulating film, a second electrode that is provided below the semiconductor substrate, a plurality of gate regions extending from the interlayer insulating film in a first direction, which is a thickness direction of the semiconductor substrate, to reach the semiconductor substrate, provided in a second direction intersecting the first direction, and extending in a third direction intersecting the first direction and the second direction, and a plurality of plugs located between the gate regions in the second direction, longer in the second direction than in the third direction, spaced apart from each other in the third direction, and electrically connecting the first electrode to the semiconductor substrate.