Tungsten Recess Filling via Dual-Cycle Pressure Modulation
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Solution Overview
Problem
Existing methods for filling recesses in substrates with tungsten are inefficient and prone to defects such as voids, requiring improvements in both efficiency and defect reduction.
Innovation Solution
A method involving multiple cycles in a film forming apparatus, where a first cycle includes introducing a tungsten-containing precursor gas, purging, and introducing a hydrogen-containing gas, followed by a second cycle with lower chamber pressure to enhance tungsten coverage and reduce defects, without the need for etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple cycles of tungsten precursor gas introduction and hydrogen gas introduction are performed with pressure reduction in the second cycle, then manufacturing precision and reliability are improved by reducing defects and voids, but process complexity increases due to multiple cycles and pressure adjustments
Solution Approach 1:
The tungsten filling process is divided into multiple cycles, where each cycle consists of introducing tungsten precursor gas, purging, introducing hydrogen-containing gas, and purging again. This segmentation allows better control over tungsten deposition and defect reduction compared to a single continuous process.
Solution Approach 2:
The chamber pressure is dynamically adjusted between cycles - the pressure during the second cycle is set lower than during the first cycle. This dynamic pressure adjustment optimizes tungsten coverage and reduces defects while maintaining process control.
2Reliability
If switching between film formation and etching is performed to prevent defects, then reliability is improved by reducing voids, but productivity deteriorates due to inefficient process switching
Solution Approach 1:
The patent combines defect prevention and tungsten filling into a single integrated process using alternating introduction of tungsten precursor gas and hydrogen-containing gas within the same film formation chamber. This eliminates the need for separate etching steps and process switching, thereby improving productivity while maintaining reliability.
Solution Approach 2:
The process maintains continuous useful action by performing multiple cycles of gas introduction and purging without interrupting the film formation flow. The alternating gas introduction continues the filling process efficiently while preventing defects, avoiding idle time associated with switching between different process types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively fills recesses with tungsten while minimizing defects and improving efficiency by optimizing gas flow and pressure conditions, ensuring complete filling without voids.
Implementation Method 1
introducing a tungsten-containing precursor gas into the chamber
Implementation Method 2
introducing a hydrogen-containing gas into the chamber
Data Source
AI summary
A method of filling recesses in a substrate with tungsten includes preparing the substrate within a chamber of a film forming apparatus, performing a first cycle at least once, the first cycle comprising introducing a tungsten-containing precursor gas into the chamber, purging the chamber, introducing a hydrogen-containing gas into the chamber, and purging the chamber, and performing a second cycle at least once after the first cycle is performed at least once, the second cycle comprising introducing the tungsten-containing precursor gas into the chamber, purging the chamber, introducing the hydrogen-containing gas into the chamber, and purging the chamber. A pressure in the chamber when the second cycle is performed is set to a pressure lower than a pressure in the chamber when the first cycle is performed.