Tunnel FET Channel Confinement for High On-Current Scaling
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Solution Overview
Problem
Existing semiconductor elements, particularly tunnel field-effect transistors, face challenges in achieving high on-current while maintaining miniaturization and low manufacturing costs, due to limitations in indirect transition-type semiconductors and the need for new equipment when using direct transition-type semiconductors.
Innovation Solution
A semiconductor element with a channel part formed of an indirect transition-type semiconductor is configured to have a plate-like shape with electron confinement surfaces arranged at a specific interval, simulating a direct transition-type semiconductor band structure to increase tunnel current, while being manufactured using existing equipment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If the area of the tunnel junction portion is increased to increase the on-current, then the current per element increases, but the element size increases making it unsuitable for integrated circuits
Solution Approach 1:
The invention changes the crystal structure parameter of the semiconductor material by using a direct transition-type semiconductor (such as GaAs, InP, or their alloy) instead of an indirect transition-type semiconductor. This material parameter change fundamentally increases the band-to-band tunneling probability, enabling high on-current density without requiring large junction areas, thus achieving miniaturization suitable for integrated circuits.
2Quantity of substance
If a direct transition-type semiconductor is used to increase the on-current, then the tunneling probability increases, but new manufacturing equipment is required increasing the manufacturing cost
Solution Approach 1:
The invention selects direct transition-type semiconductors (GaAs, InP, GaInP, GaInAs, etc.) that can be processed using existing semiconductor manufacturing equipment. By choosing materials compatible with current fabrication processes, the invention achieves high on-current through increased tunneling probability without requiring new equipment investment, thus controlling manufacturing costs.
3Ease of manufacture
If an indirect transition-type semiconductor is used to manufacture with existing equipment, then the manufacturing cost is controlled, but the tunneling probability is low resulting in small on-current
Solution Approach 1:
The invention fundamentally changes the semiconductor material parameter from indirect transition-type to direct transition-type. This material parameter change dramatically increases the band-to-band tunneling probability, enabling high on-current while maintaining compatibility with existing manufacturing equipment and processes, thus resolving the contradiction between manufacturing cost and on-current performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a significant increase in tunnel current while enabling the semiconductor element to be manufactured in small size and at low cost, suitable for high integration, using existing manufacturing processes.
Implementation Method 1
A tunnel field-effect transistor which utilizes a band-to-band tunnel phenomenon of a semiconductor is one of them, and uses the tunnel phenomenon as an operation principle different from the above-mentioned MOS transistor. The band-to-band tunnel phenomenon is a phenomenon in which even an electron that does not have sufficient energy to surmount a potential barrier passes through the other side of the barrier with a certain probability.
Implementation Method 2
arranging at a facing interval of 15 nm at the longest between the opposing surfaces, electron confinement surfaces in which a band structure of a direct transition-type semiconductor is capable of being simulatively given to the indirect transition-type semiconductor by regulation of electron motion
Data Source
AI summary
An object of the present invention is to provide a semiconductor element capable of being manufactured in small size, easily and at a low cost and obtaining a large on-current, a semiconductor integrated circuit, and a production method for the semiconductor element.A semiconductor element 10 has an element structure of a tunnel field-effect transistor. A channel part 13 formed of an indirect transition-type semiconductor is formed as a plate-like shaped portion having one end connected to a source part 14 and the other end connected to a drain part 15. Of two pairs of opposing surfaces of first opposing surfaces and second opposing surfaces which constitute the channel part 13 and are opposed in a direction perpendicular to the direction in which a current flows from the source part 14 to the drain part 15, at least one pair of the opposing surfaces selected from the two pairs is formed by arranging at a facing interval of 15 nm at the longest between the opposing surfaces, electron confinement surfaces in which a band structure of a direct transition-type semiconductor is capable of being simulatively given to the indirect transition-type semiconductor by regulation of electron motion.