Tunnel Junction Isolation for Semiconductor Optical Devices
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Solution Overview
Problem
Existing integrated semiconductor optical devices face challenges in electrical isolation between semiconductor optical devices, leading to optical scattering loss and reliability issues due to complex processing and defects caused by ion implantation for carrier inactivation.
Innovation Solution
An integrated semiconductor optical device with a tunnel junction region between active layers and cladding layers, utilizing a semi-insulating buried layer and carbon-doped AlGaInAs to enhance electrical isolation and reduce dopant diffusion, allowing for effective carrier injection and confinement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ion implantation is used to form isolation portions for electrical isolation, then electrical isolation between semiconductor optical devices is improved, but manufacturing complexity and reliability deteriorate due to complex processing and defects
Solution Approach 1:
The patent extracts the isolation function from complex ion implantation processing and implements it through a simple semi-insulating semiconductor layer that is naturally formed during epitaxial growth. This layer is selectively removed in the active region while remaining in the isolation region, providing electrical isolation without requiring additional complex processing steps.
Solution Approach 2:
The patent changes the electrical parameter of the semiconductor layer by controlling the doping concentration during epitaxial growth. The semi-insulating layer has a doping concentration of 1×10^16 to 1×10^18 atoms/cm³, which is higher than the active region but lower than traditional ion implantation, providing natural electrical isolation through parameter control rather than complex processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively separates semiconductor optical devices electrically while maintaining optical coupling, reducing optical scattering loss and improving device reliability by confining current and preventing dopant diffusion, thus enhancing the performance of integrated semiconductor optical devices.
Implementation Method 1
The tunnel junction region includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and a tunnel junction that is located between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer
Implementation Method 2
The second cladding layer and the third cladding layer form a p-n junction. When the second active layer between the second cladding layer and the first cladding layer is reverse biased, the p-n junction between the second cladding layer and the third cladding layer is reverse biased
Implementation Method 3
utilizing a semi-insulating buried layer and carbon-doped AlGaInAs to enhance electrical isolation and reduce dopant diffusion
Implementation Method 4
carbon-doped AlGaInAs to enhance electrical isolation and reduce dopant diffusion
Data Source
AI summary
In an integrated semiconductor optical device, a first cladding layer is made of a first conductivity type semiconductor. A first active layer for forming a first semiconductor optical device is provided on the first cladding layer in a first area of a principal surface of a substrate. A second active layer for forming a second semiconductor optical device is provided on the first cladding layer in a second area of the principal surface. A second cladding layer made of a second conductivity type semiconductor is provided on the second active layer. A third cladding layer made of a first conductivity type semiconductor is provided on the first active layer. A tunnel junction region is provided between the first active layer and the third cladding layer. The first active layer is coupled to the second active layer by butt joint. The second and third cladding layers form a p-n junction.