Turntable Film Deposition Seed Layer Boron Catalysis
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Solution Overview
Problem
Existing film deposition methods using vertical-type thermal processing apparatuses are inefficient due to frequent gas supply and stop cycles, leading to long processing times and decreased productivity, while turntable-type apparatuses struggle to achieve high-quality films.
Innovation Solution
A method utilizing a turntable-type film deposition apparatus with separate process areas and a seed layer formation process, where an aminosilane gas forms a seed layer on the substrate, followed by a boron-containing gas and silane-based gas to bond silicon atoms, enhancing film deposition efficiency and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a vertical-type thermal processing apparatus is used with frequent gas supply and stop cycles, then film deposition can be performed, but processing time becomes excessively long and productivity decreases
Solution Approach 1:
The process chamber is divided into multiple independent process areas (first process area, second process area, etc.) arranged along the rotational direction of the turntable. Each process area has dedicated gas supply units that can operate independently, allowing simultaneous execution of multiple process steps without frequent stopping and starting of gas supply cycles.
Solution Approach 2:
The turntable rotates continuously while carrying substrates through different process areas. Gas supply to each process area is maintained continuously during the rotation, eliminating the need to stop and start gas supply repeatedly. This continuous rotation and gas supply significantly reduces processing time while maintaining film deposition quality.
2Productivity
If a turntable-type apparatus is used to reduce processing time, then productivity improves, but film quality deteriorates
Solution Approach 1:
Each process area is equipped with dedicated gas supply units and is optimized for specific process requirements. The first process area supplies aminosilane gas for seed layer formation, while the second process area supplies silane-based gas for main film deposition. This localized optimization ensures high film quality in each stage while maintaining continuous processing.
Solution Approach 2:
A seed layer is formed in the first process area using aminosilane gas before the main film deposition in the second process area. This seed layer acts as an intermediary that improves the quality and uniformity of the subsequent silicon-containing film, enabling high-quality deposition while maintaining high productivity through continuous processing.
3Productivity
If separate process areas are introduced to improve productivity, then processing time reduces, but device complexity increases
Solution Approach 1:
The turntable serves multiple functions: it holds multiple substrates, transports them through different process areas, and enables continuous rotation for simultaneous processing. The process areas are arranged radially around the turntable, allowing compact integration of multiple functions in a single apparatus structure.
Solution Approach 2:
Process areas are arranged in the radial direction around the turntable rather than in a linear sequence. This radial arrangement allows multiple process areas to be integrated in a compact circular footprint, reducing the overall apparatus size while maintaining the benefits of multiple simultaneous process areas.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly reduces incubation time and allows for high-productivity, low-temperature film deposition with improved coverage and surface roughness, achieving high-quality silicon-containing films.
Implementation Method 1
a seed layer is formed on a surface of the substrate by supplying an aminosilane gas... to cause the silane-based gas to adsorb on a surface of an object to be processed
Implementation Method 2
causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas
Implementation Method 3
a turntable provided in a process chamber and configured to receive a substrate thereon... while rotating the turntable
Implementation Method 4
a film is deposited on the wafers by supplying a predetermined gas into the process chamber and heating the process chamber
Data Source
AI summary
A method of depositing a silicon-containing film using a film deposition apparatus is provided. The apparatus includes a turntable provided in a process chamber. In the method, a seed layer is formed on a surface of the substrate by supplying an aminosilane gas from the first process gas supplying unit for a predetermined period of time while rotating the turntable. A boron-containing gas is supplied from the first gas supplying unit to the surface of the substrate while rotating the turntable after finishing the step of forming the seed layer on the surface of the substrate. A silane-based gas is supplied from the second process gas supplying unit to the surface of the substrate while rotating the turntable and causing silicon atoms contained in the silane-based gas to bond with each other on the surface of the substrate by a catalytic action of the boron-containing gas.