Turntable Film Deposition for HfON Thickness Control
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Solution Overview
Problem
Current film deposition methods for oxide films, such as HfSiON and HfAlON, face challenges in achieving high-quality films with efficient nitrogen doping, particularly in maintaining film evenness and controlling film thickness, especially in the context of semiconductor manufacturing where High-k films are required for gate oxide applications.
Innovation Solution
A method utilizing a turntable-type film deposition apparatus with specific gas supply and separation areas allows for the sequential deposition of HfO and HfON layers by alternating between oxidation and nitrogen doping processes, ensuring precise control over film thickness and nitrogen distribution using inert gases to prevent gas mixing and enhance film quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a turntable-type film deposition apparatus is used to continuously supply reaction gases for ALD, then productivity is improved by eliminating evacuation/purge processes, but manufacturing precision deteriorates due to difficulty in controlling film thickness evenness and nitrogen doping uniformity
Solution Approach 1:
The patent divides the continuous deposition process into discrete sequential steps: oxidation step with ozone supply, nitrogen doping step with nitrogen gas supply, and inert gas purge step. Each step is controlled independently with specific gas flow rates and timing, allowing precise control of film thickness and composition while maintaining continuous processing on the turntable apparatus.
Solution Approach 2:
The patent employs periodic cycling of gas supply modes - alternating between oxidation gas supply, nitrogen gas supply, and inert gas purge - during the turntable rotation. This periodic action enables controlled deposition of oxide layers with uniform nitrogen doping while maintaining continuous processing, resolving the contradiction between speed and precision.
2Adaptability or versatility
If nitrogen gas is supplied during the deposition process to dope the oxide film, then the desired doped oxide film (HfSiON, HfAlON) is produced, but gas mixing between oxidation gas and nitrogen gas occurs causing poor film quality
Solution Approach 1:
The patent performs preliminary oxidation of the metal layer with ozone to form a pure oxide layer before introducing nitrogen gas for doping. This preliminary action ensures the oxide framework is established first, preventing gas mixing issues during the subsequent nitrogen doping step, and achieving both doping capability and film quality.
Solution Approach 2:
The patent maintains continuous processing by eliminating evacuation and purge cycles between oxidation and nitrogen doping steps. The turntable continues rotating throughout, with gases supplied in controlled sequences, achieving continuous deposition of high-quality doped oxide films without interrupting the useful action.
3Manufacturing precision
If the reaction gas supply areas are separated to prevent gas mixing, then film quality is improved, but device complexity increases due to multiple gas supply systems
Solution Approach 1:
The patent combines multiple gas supply functions into a unified turntable-based system where oxidation gas, nitrogen gas, and inert gas are supplied through coordinated timing rather than physically separated areas. The turntable rotation synchronizes gas supply zones, merging spatial separation with temporal control, reducing device complexity while maintaining film quality.
4Adaptability or versatility
If multiple oxide films with different elements are deposited and laminated to form High-k films, then adaptability for semiconductor applications is improved, but manufacturing precision deteriorates due to difficulty in maintaining film evenness across multiple deposition cycles
Solution Approach 1:
The patent controls deposition parameters including gas flow rates, supply timing, and turntable rotation speed to maintain consistent film thickness and composition across multiple deposition cycles. By optimizing these parameters for each layer (oxide, doped oxide), the system achieves uniform laminate High-k structures with excellent film evenness despite multiple deposition steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the efficient deposition of high-quality HfON films with controlled nitrogen doping, improving film evenness and thickness consistency, thereby meeting the demands of semiconductor manufacturing for High-k films.
Implementation Method 1
Because the ALD method uses the adsorption of the reaction gas onto the surface of the wafer
Implementation Method 2
an oxidation gas (the reaction gas B) is supplied onto the surface of the wafer, and the reaction gas A and the reaction gas B react thereby depositing a molecular layer containing the predetermined element
Data Source
AI summary
A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.