Turntable Substrate Transfer for CVD Sputtering Film Stacks
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Solution Overview
Problem
In semiconductor manufacturing, achieving high throughput is challenging when forming films using different methods like sputtering and CVD, especially when films are formed under different pressures or in incompatible ambients, as it leads to oxidation of metal films and contamination of remnant gases between chambers.
Innovation Solution
A semiconductor manufacturing apparatus with a turntable system that allows for the efficient transfer of substrates between CVD and sputtering chambers without exposing them to the same ambient, maintaining airtight conditions and controlling pressures to prevent gas transfer, thereby allowing for the formation of film stacks with improved throughput and quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If films are formed by different methods (sputtering and CVD) under different pressures, then manufacturing versatility is improved, but process throughput deteriorates due to repeated pressure adjustments and ambient changes
Solution Approach 1:
The system is divided into multiple independent processing chambers (sputtering chamber, CVD chamber, oxidation chamber, nitridation chamber), each capable of operating independently at its own optimized pressure and ambient conditions. This segmentation allows simultaneous or sequential processing without requiring pressure adjustments between chambers, thereby maintaining high versatility while improving throughput.
Solution Approach 2:
The patent implements continuous processing by transferring substrates between chambers without breaking vacuum or changing ambient conditions. Substrates are processed sequentially through different chambers in a continuous vacuum environment, eliminating idle time for pressure adjustments and ambient changes, thus maintaining continuous productive action.
2Adaptability or versatility
If substrates are transferred between chambers with different ambients, then manufacturing flexibility is improved, but film quality deteriorates due to oxidation and contamination
Solution Approach 1:
The system maintains a vacuum environment throughout the substrate transfer path and uses inert or controlled atmospheres in each chamber. This prevents oxidation and contamination of sensitive films during transfer between chambers with different processing conditions, ensuring film quality is maintained while allowing processing flexibility.
Solution Approach 2:
Transfer chambers or load locks serve as intermediary zones between processing chambers with different ambients. These intermediaries allow substrates to be transferred between chambers while maintaining vacuum integrity and preventing direct exposure to incompatible ambients, thus protecting film quality while enabling processing versatility.
3Manufacturing precision
If multiple film formation processes are performed sequentially, then film stack quality is improved, but manufacturing time increases
Solution Approach 1:
The system enables continuous processing by eliminating idle time between film formation steps. Substrates are transferred between chambers without breaking vacuum, and multiple chambers can operate simultaneously or in rapid sequence, maintaining continuous productive action while producing high-quality film stacks.
Solution Approach 2:
The system performs preliminary preparation of substrates and chambers before actual film formation. Chambers are pre-conditioned with appropriate pressures and atmospheres, and substrates are pre-loaded and positioned, so that when processing begins, all conditions are already optimized and ready, reducing overall manufacturing time while maintaining quality.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables the consecutive execution of film formation processes with different methodologies and conditions, preventing oxidation and contamination, thus enhancing the throughput and quality of film stacks by maintaining airtight conditions and controlled pressure transfer.
Implementation Method 1
a turn table configured to allow placement of at least a first semiconductor substrate and a second semiconductor substrate and configured to be capable of moving positions of the first semiconductor substrate and the second semiconductor substrate by turning
Implementation Method 2
controlling pressures to prevent gas transfer, thereby allowing for the formation of film stacks with improved throughput and quality
Implementation Method 3
CVD (Chemical Vapor Deposition)
Implementation Method 4
sputtering and CVD (Chemical Vapor Deposition)
Data Source
AI summary
A method of manufacturing a semiconductor device uses a semiconductor manufacturing apparatus including a turn table allowing placement of at least first and second semiconductor substrates and being capable of moving positions of the first and the second semiconductor substrates by turning, a first film forming chamber, and a second film forming chamber. The first and the second film forming chambers are provided with an opening capable of loading and unloading the first and the second semiconductor substrates by lifting and lowering the first and the second semiconductor substrates placed on the turn table. The method includes transferring the first and the second semiconductor substrates between the first and the second film forming chambers by turning the turn fable and lifting and lowering the first and the second semiconductor substrates placed on the turn table; and forming a stack of films above the first and the second semiconductor substrates.