TVS Diode With Integrated MIM Capacitor for Harmonic Reduction
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Solution Overview
Problem
Transient voltage suppression (TVS) diodes generate unwanted harmonics due to their non-linear capacitance, which causes interference and distortions in RF or power lines, particularly in applications near radio frequency signal paths or power lines.
Innovation Solution
A semiconductor device with a metal-insulator-metal (MIM) capacitor integrated in parallel with the TVS diode to provide a linear capacitance value, masking the non-linear capacitance of the TVS diode and reducing harmonic generation, by forming a semiconductor die with trenches and using conductive and insulating layers to create a stable capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a TVS diode is used to suppress transient voltage spikes, then protection against voltage transients is improved, but harmonic generation increases causing interference and distortions
Solution Approach 1:
The patent combines a TVS diode with a capacitor to form an integrated device. The capacitor is connected in parallel with the TVS diode, merging two separate components into a single packaged unit. This combination allows the device to provide both transient voltage suppression and harmonic filtering functions simultaneously, reducing the need for separate components while addressing both protection and interference reduction requirements.
Solution Approach 2:
The capacitor acts as an intermediary element that mediates between the nonlinear TVS diode and the external circuit. By placing the capacitor in parallel with the TVS diode, it provides a linearizing effect on the overall capacitance, reducing the nonlinear characteristics that generate harmonics. The capacitor essentially masks or compensates for the nonlinear behavior of the TVS diode, allowing both components to coexist without the full negative effects of the TVS diode's nonlinearity.
2Reliability
If the capacitance of the TVS diode is increased to improve protection, then the suppression capability is improved, but the non-linear capacitance effect increases causing more harmonics
Solution Approach 1:
The patent merges a capacitor with a TVS diode into an integrated device. The capacitor is connected in parallel with the TVS diode, combining their functions. This allows the overall device to have enhanced suppression capability from the TVS diode while the capacitor provides linearizing capacitance that reduces harmonic generation, effectively decoupling the relationship between suppression capability and harmonic interference.
Solution Approach 2:
The patent changes the overall capacitance characteristics of the device by adding a capacitor in parallel with the TVS diode. This modifies the voltage-capacitance relationship of the combined device, making it more linear than the TVS diode alone. The capacitor's linear capacitance dominates at higher voltages, reducing the nonlinear effects that generate harmonics while maintaining the suppression capability provided by the TVS diode's breakdown characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The integration of a MIM capacitor with the TVS diode results in a semiconductor device with improved harmonic characteristics, reducing harmonic interference and protecting electronic devices from transient voltage spikes while maintaining a stable capacitance.
Implementation Method 1
A semiconductor device with a metal-insulator-metal (MIM) capacitor integrated in parallel with the TVS diode to provide a linear capacitance value, masking the non-linear capacitance of the TVS diode and reducing harmonic generation
Implementation Method 2
TVS diodes are solid-state, silicon avalanche devices that are constructed with one or more p-n junctions
Implementation Method 3
The TVS diode shunts transient voltage spikes away from the load through the TVS diode to protect the load
Data Source
Figure 1a~1c
Figure 1d~1e
Figure 2a
AI summary
A semiconductor device includes a semiconductor die. A transient voltage suppression (TVS) structure is formed in the semiconductor die. A capacitor is formed over the semiconductor die. In one embodiment, the capacitor is formed by depositing a first conductive layer over the semiconductor die, depositing an insulating layer over the first conductive layer, and depositing a second conductive layer over the semiconductor die. In another embodiment, the capacitor is formed by forming a trench in the semiconductor die, depositing an insulating material in the trench, and depositing a conductive material in the trench.