Integrated TVS-Schottky Junction for Forward-Bias Blocking
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Solution Overview
Problem
Unidirectional transient voltage suppression (TVS) diodes can interfere with the normal operation of electronic components by conducting current when forward biased, which is undesirable for protecting these components from voltage spikes.
Innovation Solution
A transient voltage suppression device comprising a single crystal semiconductor substrate doped with specific conductivity types, featuring a TVS diode and a Schottky diode integrated in a single semiconductor substrate, with carefully controlled dopant concentrations to minimize interference during normal operation while effectively clipping voltage spikes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a unidirectional TVS diode is used to protect electronic components from voltage spikes, then voltage spike protection is provided, but the TVS diode conducts current when forward biased and interferes with normal operation of the protected component
Solution Approach 1:
The invention divides the TVS device into two separate diode structures: a first diode (TVS diode) for voltage spike protection and a second diode (Schottky diode) for blocking forward bias current. Each diode is independently configured with specific doping concentrations and junction depths to perform its designated function without interfering with the other or with normal circuit operation.
Solution Approach 2:
The second diode acts as an intermediary element that blocks forward bias current before it can reach the first diode. By positioning this Schottky diode in series with the first diode and configuring it with appropriate electrical characteristics, it serves as a mediator that prevents harmful forward conduction while allowing the first diode to maintain its voltage spike protection function.
2Reliability
If the TVS diode is placed in parallel with the component to be protected, then voltage spike protection is achieved, but the TVS diode may conduct during normal operation when forward biased
Solution Approach 1:
The protective device is segmented into two functional diodes: the first diode maintains parallel connection for voltage spike protection while the second diode is configured in series to control current flow direction. This segmentation allows the first diode to remain connected in parallel for protection without suffering from forward bias conduction issues during normal operation.
3Manufacturing precision
If a single crystal semiconductor substrate with specific doping concentrations is used, then manufacturing precision and device performance are improved, but device complexity increases
Solution Approach 1:
Two separate diode structures with different doping requirements are merged into a single semiconductor substrate. The first diode region and second diode region are formed in the same substrate with different doping concentrations and junction configurations, allowing both devices to be manufactured together in a single fabrication process while maintaining precise control over each region's electrical characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution allows for the protection of electronic components from voltage spikes without interfering with their normal operation, providing reduced series resistance and increased power dissipation capability, thus effectively safeguarding against overloads.
Implementation Method 1
This is a diode made of a semiconductor material that limits surges by an avalanche effect for the sole purpose of protecting an electronic circuit
Implementation Method 2
a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode
Data Source
AI summary
The present disclosure relates to a transient voltage suppression device comprising a single crystal semiconductor substrate doped with a first conductivity type comprising first and second opposing surfaces, a semiconductor region doped with a second conductivity type opposite to the first conductivity type extending into the substrate from the first surface, a first electrically conductive electrode on the first side contacting the semiconductor region and a second electrically conductive electrode on the second side contacting the substrate, a first interface between the substrate and the semiconductor region forming the junction of a TVS diode and a second interface between the first electrically conductive electrode and the semiconductor region or between the substrate and the second electrically conductive electrode forming the junction of a Schottky diode.