Twin Chamber Semiconductor Processing for Strain Preservation
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Solution Overview
Problem
In semiconductor devices with critical dimensions below 10 nm, thermal processing to activate boron-doped silicon-germanium (SiGe:B) contacts leads to strain relaxation in the channel region and dopant profile degradation, necessitating a new thermal process that can effectively activate doped contacts in these small devices.
Innovation Solution
A semiconductor processing apparatus with twin processing chambers, a gas activator, substrate supports with multiple heating zones, and a thermal control member, which uses a remote plasma unit to provide activated gases and maintain precise temperature control, minimizing degradation during thermal processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If commonly-used thermal processes are used to activate boron-doped silicon-germanium contacts, then the contacts can be activated, but strain in the channel region relaxes and dopant profile degrades
Solution Approach 1:
The processing system is divided into two separate chambers: a first processing chamber for doping and initial activation, and a second processing chamber for final contact activation. This segmentation allows each chamber to be optimized for its specific function, enabling contact activation while preserving channel strain and dopant profile through controlled gas flow and temperature management between chambers.
Solution Approach 2:
A passage connects the two processing chambers, serving as an intermediary that allows controlled gas flow between them. This intermediary structure enables the transfer of activated species from the first chamber to the second chamber, allowing contact activation to occur in the second chamber without exposing the channel region to degrading thermal conditions.
2Reliability
If thermal processing is used to activate doped contacts in 10 nm devices, then contact conductivity is improved, but strain relaxation and dopant profile degradation occur
Solution Approach 1:
The first processing chamber performs preliminary activation of the doped contacts using a controlled thermal process with specific gas composition. This preliminary action prepares the contacts for final activation in the second chamber while minimizing exposure to conditions that would cause strain relaxation, thereby achieving contact conductivity improvement without harmful strain relaxation.
Solution Approach 2:
The system changes physical parameters including temperature profiles, gas composition, and pressure conditions between the two chambers. By carefully controlling these parameter changes, the process achieves contact activation while maintaining strain in the channel region and preventing dopant profile degradation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus effectively activates doped contacts in 10 nm and smaller devices, reducing strain and dopant profile degradation, thereby enhancing the performance and reliability of semiconductor devices.
Implementation Method 1
A gas activator is coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid
Implementation Method 2
a remote plasma unit coupled to the lid outside the processing chambers, the remote plasma unit having an outlet in fluid communication with the portal of the lid
Implementation Method 3
each substrate support having at least two heating zones
Implementation Method 4
each substrate support having at least two heating zones
Implementation Method 5
a thermal control member coupled to the lid at an edge of each gas distributor
Data Source
AI summary
A semiconductor processing apparatus is described that has a body with a wall defining two processing chambers within the body; a passage through the wall forming a fluid coupling between the two processing chambers; a lid removably coupled to the body, the lid having a portal in fluid communication with the passage; a gas activator coupled to the lid outside the processing chambers, the gas activator having an outlet in fluid communication with the portal of the lid; a substrate support disposed in each processing chamber, each substrate support having at least two heating zones, each with an embedded heating element; a gas distributor coupled to the lid facing each substrate support; and a thermal control member coupled to the lid at an edge of each gas distributor.