Twisted Memory Array Contacts for Lower Parasitic Capacitance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In three-dimensional (3D) semiconductor memory devices, the close proximity of conductive lines leads to parasitic capacitance and noise issues, making it challenging to minimize space while maintaining effective contact patterns.
Innovation Solution
The formation of twisted conductive lines with curved or sinusoidal shapes, where upper conductive lines are longer than lower ones, allows for reduced horizontal distance between contacts, thereby easing spatial constraints and reducing noise by minimizing parasitic capacitance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conductive lines are placed in close proximity to ease spatial constraints, then space utilization is improved, but parasitic capacitance and noise increase
Solution Approach 1:
The patent applies curvature by forming conductive lines with curved or sinusoidal shapes rather than straight lines. This allows the conductive lines to twist around each other in three-dimensional space, maintaining close proximity for space efficiency while the curved geometry reduces parallel alignment that causes parasitic capacitance. The curved paths minimize the effective parallel length between adjacent conductive lines, thereby reducing capacitive coupling and noise interference.
Solution Approach 2:
The patent transitions from two-dimensional planar routing to three-dimensional twisted routing. By forming conductive lines that extend in multiple dimensions with varying heights and curved trajectories, the design achieves closer proximity without excessive parallel alignment. The vertical dimension and curved paths allow conductive lines to occupy the same horizontal footprint while maintaining spatial separation through height differences and angular orientation, reducing parasitic capacitance.
2Object-affected harmful factors
If conductive lines are twisted to reduce parasitic capacitance, then noise is reduced, but manufacturing precision requirements increase
Solution Approach 1:
The curved or sinusoidal shape formulation provides a mathematically defined geometry that can be precisely controlled during fabrication. The curvature radius and wave parameters can be specified in the design rules, allowing manufacturing equipment to reproduce the twisted patterns with consistent precision. This defined geometric approach transforms the complex twisted routing into a manufacturable pattern with controllable parameters.
Solution Approach 2:
The patent controls the twisted conductive line geometry through specific parameters including curvature radius, sinusoidal wave amplitude and frequency, and relative height differences between adjacent lines. By defining and controlling these parameters within specific ranges, the design achieves noise reduction while maintaining manufacturability. The parameter specifications allow fabrication processes to reproduce the twisted patterns with adequate precision.
Data Source
AI summary
Devices, systems, and methods for forming twisted conductive lines are described herein. One method includes: forming a first row and a second row of a first number of vertical conductive line contacts, the vertical contacts in each row are arrayed in a first horizontal direction and the first row is spaced from the second row in a second horizontal direction; forming a number of conductive lines with curved portions, each conductive line making contact with alternating conductive line contacts of the first and second rows of the first number of vertical conductive line contacts; and forming a second number of conductive lines with one or more curved portions, each conductive line making contact with the remaining ones of the conductive line contacts of the first and second rows of the first number of vertical conductive line contacts that have not been contacted by the first number of conductive lines.