Two-Channel Semiconductor Component With Depth Isolation
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Solution Overview
Problem
Current semiconductor technologies face challenges in miniaturizing two-channel components, particularly in CMOS technology, where achieving selective and efficient contact between conductivity channels is difficult due to the lack of a barrier between channels, leading to undesirable merging and limited scalability.
Innovation Solution
A two-channel semiconductor component design featuring a group IV semiconductor body with a top gate electrode, a bottom gate electrode, and strategically dimensioned source and drain areas, along with isolation areas, allows for selective contact and decoupling of channels using a barrier area, enabling resonant tunneling for efficient conductivity control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a barrier between line channels is implemented using III-V material system (e.g., AlGaAs separator between GaAs channels), then selective contact and separation of channels is achieved, but the lateral component dimensions reach micrometer range which is disproportionately large compared to current silicon-based CMOS technology
Solution Approach 1:
The patent changes the material parameter from III-V heterostructures to silicon-based CMOS compatible materials, enabling dimensional scaling from micrometer range to sub-micrometer range while maintaining the barrier function through different material properties and device geometry
Solution Approach 2:
The patent transitions from lateral barrier structures in III-V materials to vertical/depth-direction isolation structures in silicon, using the third dimension (depth) to achieve channel separation instead of relying solely on lateral dimensions, enabling compatibility with scaled CMOS technology
2Adaptability or versatility
If the first source area has greater deep extension than the first drain area, then selective contact of channels is achieved with direct contact to source electrode alone for the second conductivity channel, but device structure complexity increases
Solution Approach 1:
The patent segments the source and drain areas into asymmetric depth extensions, with the source area extending deeper than the drain area, enabling the second conductivity channel to be contacted selectively by the source electrode alone, thus achieving independent channel control
Solution Approach 2:
The patent employs asymmetric geometry where the first source area has greater deep extension than the first drain area, creating different contact configurations for source and drain that enable selective channel access and independent gate control
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves efficient lateral electricity transport with high switching speed and low loss performance, even at short channel lengths, and is compatible with CMOS technology, enabling scalable and selective control of conductivity channels.
Implementation Method 1
The generation and gate control of conductivity channels in semiconductor construction elements with the help of the field effect is thoroughly known from field effect transistors
Implementation Method 2
a coupling between the conductivity channels can be achieved by a resonant tunnel effect
Data Source
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AI summary
The invention relates to a two-channel semiconductor component having a doped semiconductor body formed from a group IV semiconductor material, a top-side top-gate electrode, and a bottom-side bottom-gate electrode. A source region has a greater extent in a depth direction in the silicon body than a drain region. A source isolation region is arranged between a source region and the top-gate electrode, and a drain isolation region is arranged between a drain region and the top-gate electrode, which isolation region extends in a depth direction as far as the lower edge of a gate isolation layer of the top-gate electrode. In a first operating state a first conductive channel separated laterally from the source region by the source isolation region can be formed, as can a second conductive channel, which is decoupled from the first conductive channel by a barrier region of the semiconductor body extending in a depth direction between the conductive channels. In a second operating state which satisfies a resonance condition, the first and second conductive channel can be coupled to one another by means of a tunnel effect for minority charge carriers over the barrier area of the semiconductor body.