Two-Dimensional Crystal Growth Templates for Grain Boundary Control

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Solution Overview

Problem

The deposition of transition metal dichalcogenide crystals with controlled crystalline structure and morphology remains a challenge, limiting the performance of two-dimensional transistors as they enter the sub-10 nm technology node.

Innovation Solution

A template is designed with specific wall configurations and angles to facilitate the growth of two-dimensional material crystals, allowing for precise alignment and control over the crystal structure, thereby promoting monocrystalline, low-defect crystals with unidirectional orientation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional deposition methods are used to grow two-dimensional material crystals, then the process is simple, but the control over crystalline structure and morphology is poor

Engineering Contradiction:
Improvecontrol over crystalline structure and morphologyVSAvoiddeposition process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The template is prepared in advance with pre-formed walls and corners positioned to match the desired crystal structure. The walls are configured with specific heights (0.6-2 nm) and the corners are shaped to receive and orient the two-dimensional material during deposition, enabling precise control over crystal growth before the actual deposition begins.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The template acts as an intermediary structure between the substrate and the two-dimensional material. The template's walls and corners serve as mediators that guide the material deposition process, providing structural guidance and orientation cues that result in controlled crystalline structure and morphology without requiring complex deposition parameters.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Stability of the object's composition

If the wall height is increased to provide better structural support, then the structural stability improves, but the crystal growth alignment precision deteriorates

Engineering Contradiction:
Improvestructural stability of templateVSAvoidcrystal growth alignment precision
Core Design Contradiction:
Stability of the object's compositionVSManufacturing precision

Solution Approach 1:

The wall height is optimized within a specific parameter range (0.6-2 nm) that balances structural stability with crystal growth alignment. This parameter optimization ensures that the walls are tall enough to provide structural support and define the crystal boundaries, while remaining short enough to allow precise alignment of the two-dimensional material with the template corners during deposition.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If the angle tolerance is relaxed to ease manufacturing, then the manufacturing ease improves, but the crystal quality and orientation control deteriorate

Engineering Contradiction:
Improvetemplate manufacturing easeVSAvoidcrystal orientation control
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The template exhibits local quality variations where the corner regions are specifically engineered with precise angular geometry (within 5° tolerance) to ensure accurate crystal orientation, while the wall regions have more relaxed manufacturing requirements. This localized precision at the critical corner areas allows for high crystal quality without requiring the entire template to be manufactured with extreme precision.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS12428749B2Template for growing a crystal of a two-dimensional material
Publication Date: 2025.09.30 INTERUNIVERSITAIR MICRO ELECTRONICS CENT (IMEC VZW)
  • US12428749B2 patent drawing
  • US12428749B2 patent drawing
  • US12428749B2 patent drawing

AI summary

In one aspect, a template for growing a crystal of a two-dimensional material can include a flat surface for growing the crystal thereon, a first wall on the flat surface, and a second wall on the flat surface. The first and the second walls can meet at a corner to form an angle having an opening that is adapted to align with the crystal structure of the crystal with a tolerance of up to 5°. Each of the first and second walls can have a length of from 5 nm to 1000 nm and a height of from 0.6 nm to 2 nm.