Two-Layer Inversion Patterning for Uniform Etch Mask Performance
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Solution Overview
Problem
Existing pattern formation methods in semiconductor devices and MEMS face limitations in material selection due to the need for both inkjet method compatibility and etching durability, leading to reduced material freedom and increased development costs.
Innovation Solution
A two-layer inversion layer configuration is used, with a first inversion layer formed on a projecting and recessed pattern, followed by a flattened second inversion layer, and etched using a mixed gas of etching gases to expose the top surface of the projecting portion, allowing for uniform etching and maintaining the mask functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the inversion layer is formed by inkjet method and smoothed by pressing with a planar mold, then the smoothness of the inversion layer is improved, but the etching durability of the inversion layer deteriorates
Solution Approach 1:
The inversion layer is divided into two separate layers: a first inversion layer that provides etching durability and a second flattened inversion layer that provides smoothness. This segmentation allows each layer to be optimized for its specific function without compromising the other, resolving the contradiction between smoothness and etching durability
Solution Approach 2:
The invention uses a composite structure of two different inversion layers with distinct material properties. The first inversion layer material is selected for etching durability, while the second flattened inversion layer material is selected for smoothness and inkjet compatibility. This composite approach enables both requirements to be satisfied simultaneously
2Manufacturing precision
If materials are selected to satisfy both inkjet method compatibility and etching durability, then the smoothness and etching durability are improved, but the degree of freedom in material selection deteriorates
Solution Approach 1:
By segmenting the inversion layer into two functional layers, the invention allows independent material selection for each layer. The first layer can be chosen from materials with high etching durability, while the second layer can be chosen from materials compatible with inkjet methods, greatly expanding the overall material selection freedom
Solution Approach 2:
The invention changes the material parameters independently for each layer. The first inversion layer uses materials optimized for etching resistance, while the second flattened inversion layer uses materials optimized for inkjet deposition and smoothing, allowing each parameter to be optimized without constraining the other
3Device complexity
If a single inversion layer is used, then the process complexity is reduced, but the ability to achieve both smoothness and etching durability deteriorates
Solution Approach 1:
The inversion layer is segmented into two distinct layers with different functions: the first inversion layer provides etching durability and the second flattened inversion layer provides smoothness. This segmentation enables both properties to be achieved simultaneously, overcoming the limitations of a single-layer approach
Solution Approach 2:
Each layer is designed with local quality optimized for its specific function. The first inversion layer has material properties optimized for etching resistance, while the second flattened inversion layer has material properties optimized for smoothness and inkjet compatibility. This local optimization allows both requirements to be met without excessive complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables uniform etching and maintains mask functionality, allowing for high freedom in material selection and reducing development costs while achieving desired pattern formation.
Implementation Method 1
in the first etching, the first inversion layer and the flattened inversion layer are etched using mixed gas obtained by a plurality of kinds of etching gas
Data Source
AI summary
A pattern formation method includes: forming a first inversion layer on a projecting and recessed pattern of a curable composition; forming a flattened inversion layer as a second inversion layer on the first inversion layer; performing first etching of etching an upper layer portion of an inversion layer including the first inversion layer and the flattened inversion layer to expose a top surface of a projecting portion of the projecting and recessed pattern; and performing second etching of etching the exposed pattern of the curable composition using the inversion layer remaining in a recessed portion of the projecting and recessed pattern as a mask, and in the first etching, the first inversion layer and the flattened inversion layer are etched using mixed gas obtained by a plurality of kinds of etching gas.