Two-Level Main Memory System for Capacity Expansion

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Solution Overview

Problem

Current main memory systems, relying on dynamic random access memory (DRAM) modules, face limitations in memory density and cost, requiring multiple modules to increase capacity, which adversely affects the form factor, especially in mobile devices.

Innovation Solution

A two-level main memory system comprising a smaller, faster near memory (DRAM) and a larger, slower far memory (volatile or nonvolatile storage) that is transparent to the operating system, with a 2LM engine managing data transfer and wear-leveling, enabling efficient capacity expansion without increasing system volume.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If multiple DIMM modules are used to increase main memory capacity, then memory capacity is improved, but system volume and cost increase

Engineering Contradiction:
Improvemain memory capacityVSAvoidsystem volume
Core Design Contradiction:
Quantity of substanceVSVolume of stationary object

Solution Approach 1:

The memory system is segmented into two distinct levels: a first level of volatile memory (DRAM) for fast access and a second level of non-volatile memory (flash storage) for capacity. This segmentation allows the system to achieve high capacity without proportionally increasing volume, as the non-volatile memory provides dense storage in a compact form factor.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent introduces a hierarchical memory architecture that adds a temporal dimension to memory access. Instead of merely increasing spatial capacity with more DIMM modules, the system adds a second storage dimension (non-volatile memory) that can be accessed sequentially, effectively decoupling capacity expansion from volume increase.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If multiple DIMM modules are used to increase main memory capacity, then memory capacity is improved, but cost increases

Engineering Contradiction:
Improvemain memory capacityVSAvoidcost
Core Design Contradiction:
Quantity of substanceVSEase of manufacture

Solution Approach 1:

Different memory technologies are assigned to different functional zones: volatile memory (DRAM) is used locally where speed is critical for active data, while non-volatile memory (flash storage) is used where capacity and cost-effectiveness are priorities. This local quality differentiation optimizes the cost-performance ratio by using cheaper non-volatile memory for bulk storage.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The system employs non-volatile memory (flash storage) as a cost-effective alternative to expensive volatile memory for bulk capacity requirements. While non-volatile memory has slower access speeds, it provides economical capacity expansion, similar to using disposable storage media for archival purposes.

Inventive Principle:
Principle #27Cheap short-living objects (Disposable)

3Speed

If DRAM is used for main memory, then access speed is improved, but memory density and capacity efficiency deteriorate

Engineering Contradiction:
Improvememory access speedVSAvoidmemory density
Core Design Contradiction:
SpeedVSQuantity of substance

Solution Approach 1:

The memory subsystem is segmented into performance-critical volatile memory for fast access and capacity-efficient non-volatile memory for dense storage. This segmentation allows the system to achieve both high speed and high density by distributing data across two media with complementary characteristics.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The system dynamically manages data between volatile and non-volatile memory based on access patterns and capacity requirements. Hot data is kept in fast volatile memory while cold data is stored in dense non-volatile memory, creating a dynamic balance between speed and density that adapts to workload conditions.

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS10365832B2Two-level system main memory
Publication Date: 2019.07.30 INTEL CORP
  • US10365832B2 patent drawing
  • US10365832B2 patent drawing
  • US10365832B2 patent drawing

AI summary

Embodiments of the invention describe a system main memory comprising two levels of memory that include cached subsets of system disk level storage. This main memory includes “near memory” comprising memory made of volatile memory, and “far memory” comprising volatile or nonvolatile memory storage that is larger and slower than the near memory.The far memory is presented as “main memory” to the host OS while the near memory is a cache for the far memory that is transparent to the OS, thus appearing to the OS the same as prior art main memory solutions. The management of the two-level memory may be done by a combination of logic and modules executed via the host CPU. Near memory may be coupled to the host system CPU via high bandwidth, low latency means for efficient processing. Far memory may be coupled to the CPU via low bandwidth, high latency means.