Two-Part Insulation Structure for Semiconductor Isolation
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Solution Overview
Problem
Current insulation processes in semiconductor devices, such as those using gallium nitride, face challenges in maintaining effective isolation between adjacent elements, particularly at high temperatures, as they either damage materials or generate additional leakage current paths.
Innovation Solution
A double insulation process is employed, comprising an ion implantation process to form a first insulation structure and an etching process to create a second insulation structure, where the first insulation structure is ion-doped III-V compounds and the second is dielectric materials, providing a composite insulation structure that compensates for the limitations of each individual method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an etching process is used to provide isolation, then insulation between adjacent elements is improved, but material damage occurs and additional leakage current paths are generated
Solution Approach 1:
The insulation structure is divided into two distinct parts: a first insulation structure formed by ion implantation and a second insulation structure formed by etching. This segmentation allows each part to perform its specific function - the first structure provides bulk insulation without material damage, while the second structure provides surface isolation, thereby eliminating the harmful effects of using a single etching-based approach.
Solution Approach 2:
The patent employs a composite insulation structure combining two different insulation methods (ion implantation and etching) to create a multi-layered insulation system. This composite approach leverages the advantages of both methods while compensating for their individual disadvantages, providing superior isolation performance without the harmful side effects.
2Object-generated harmful factors
If ion implantation is used to form insulation region, then material damage and leakage current paths are avoided, but the formed insulation region is sensitive to temperature and isolation effect deteriorates at high temperature
Solution Approach 1:
The insulation structure is divided into two distinct parts: a first insulation structure formed by ion implantation and a second insulation structure formed by etching. This segmentation allows each part to perform its specific function - the first structure provides bulk insulation without material damage, while the second structure provides surface isolation, thereby eliminating the harmful effects of using a single etching-based approach.
Solution Approach 2:
The patent employs a composite insulation structure combining two different insulation methods (ion implantation and etching) to create a multi-layered insulation system. This composite approach leverages the advantages of both methods while compensating for their individual disadvantages, providing superior isolation performance without the harmful side effects.
3Device complexity
If a single insulation method is used, then process complexity is reduced, but either material damage occurs or temperature sensitivity increases
Solution Approach 1:
The insulation structure is divided into two distinct parts: a first insulation structure formed by ion implantation and a second insulation structure formed by etching. This segmentation allows each part to perform its specific function - the first structure provides bulk insulation without material damage, while the second structure provides surface isolation, thereby eliminating the harmful effects of using a single etching-based approach.
Solution Approach 2:
The patent employs a composite insulation structure combining two different insulation methods (ion implantation and etching) to create a multi-layered insulation system. This composite approach leverages the advantages of both methods while compensating for their individual disadvantages, providing superior isolation performance without the harmful side effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively blocks conduction between adjacent elements, maintaining a strong isolation effect even at high temperatures while minimizing leakage current, thereby improving the performance of semiconductor devices like gallium nitride high electron mobility transistors.
Implementation Method 1
An insulation structure is formed within the insulation region by an ion implantation process and an etching process
Data Source
AI summary
A method for forming a semiconductor device is provided. A substrate is provided. An epitaxial layer is formed on the substrate. An insulation region and an active region are defined on the upper surface of the epitaxial layer. An insulation structure is formed within the insulation region by an ion implantation process and an etching process, wherein the insulation structure includes a first insulation structure and a second insulation structure. A gate is formed on the epitaxial layer and is disposed within the active region. A source and a drain are formed on opposite sides of the gate and within the active region. A semiconductor device is also provided.