Substrate Structure Metrology Using Two-Target Reference Imaging

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Solution Overview

Problem

Current metrology methods struggle to achieve a combination of large range and extreme accuracy for measuring millimeter-scale structures with nanometer precision, as standard microscopy techniques are limited by resolution and require time-consuming image stitching.

Innovation Solution

A two-target based method using microscopy to measure the distance between the two technologies, the method involves forming a reference device comprising a first and a second target device, the method employs a two-target based reference device realized by lithography, allowing for indirect dimensional measurement from two images acquired by microscopy, utilizing a predefined reference distance and measurements from each image to determine the dimension with high accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Area of stationary object

If light microscopy is used to measure large structures, then the field of view is large, but the spatial resolution is insufficient (cannot resolve features below several hundred nanometers)

Engineering Contradiction:
Improvefield of viewVSAvoidspatial resolution
Core Design Contradiction:
Area of stationary objectVSMeasurement precision

Solution Approach 1:

The patent divides the measurement task into segments: a large-scale reference structure is divided into multiple local features, and the measurement is performed in stages. First, a low-resolution overview captures the entire field of view including the reference structure and target feature. Then, high-resolution measurements are performed on specific local regions (the reference structure and the target feature) separately. This segmentation allows the system to combine the large field of view capability with nanometer-scale measurement precision.

Inventive Principle:
Principle #1Segmentation

2Measurement precision

If SEM is used to achieve high spatial resolution, then the measurement precision is improved (nanometer scale), but the field of view is limited (only a few microns square)

Engineering Contradiction:
Improvespatial resolutionVSAvoidfield of view
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The patent introduces a reference structure as an intermediary element that bridges the gap between large-scale and small-scale measurements. The reference structure has features at multiple scales: a large overall dimension that can be captured in a low-resolution overview, and smaller local features that can be measured with high precision using SEM. By measuring the reference structure's local features with high precision and using the known relationship between these features and the large-scale dimension, the system can indirectly determine large dimensions with nanometer precision without requiring the entire field of view to be visible at high resolution.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If image stitching method is used to measure millimeter-scale structures with nanometer accuracy, then the measurement precision is improved, but the measurement time increases significantly

Engineering Contradiction:
Improvedimensional measurement accuracyVSAvoidmeasurement time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The patent performs preliminary action by pre-defining a reference structure with known dimensional relationships before the actual measurement of the target feature. The reference structure is designed and fabricated with precise, pre-calibrated features that establish a measurement scale. During the measurement process, instead of performing complex image stitching and coordinate transformations across multiple images, the system simply compares the target feature against the pre-established reference structure. This preliminary preparation eliminates the time-consuming image stitching process while maintaining nanometer-scale accuracy.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentEP4668016A1Method for determining a dimension of a structure formed on a substrate
Publication Date: 2025.12.24 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP4668016A1 patent drawingFigure 1~2
  • EP4668016A1 patent drawingFigure 3~4
  • EP4668016A1 patent drawingFigure 5~6

AI summary

The invention relates to a method (100) for determining a dimension (DM1) between two opposite edges (11,12) of a structure (1) formed on a substrate (3), by: - Forming on the substrate (3), by a lithographic apparatus, a first target (21) and a second target (22) facing the first target (21) and separated from the first target (21) by a predefined reference distance (DREF), - Acquiring using a microscopy tool, a first image (IMG1) of a first local aera including the first target (21) and the first edge (11), and a second image (IMG2) of a second local aera including the second target (22) and the second edge (12), - Measuring in the first image (IMG1) a first distance (OFFSET1) between the first target (21) and the first edge (11), and in the second image (IMG2), a second distance (OFFSET2) between the second target (22) and the second edge (12), - Computing the measured first and second distances (OFFSET1, OFFSET2) and the predefined reference distance (DREF).