Two-Transistor Bandgap Reference Circuit Body Biasing
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Bandgap reference (BGR) circuits in integrated circuits face challenges in maintaining a stable reference voltage over temperature variations, leading to increased power consumption due to higher output reference voltage, which affects the operating range and battery life of mobile electronic devices.
Innovation Solution
A two-transistor BGR circuit with a body bias circuit that applies a reverse bias to one transistor to increase its threshold voltage, reducing the overall reference voltage output, thereby reducing power consumption and extending battery life.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If a conventional bandgap reference circuit is used to maintain stable reference voltage, then temperature stability is improved, but power consumption increases
Solution Approach 1:
The patent applies body biasing to dynamically adjust the threshold voltage of transistors in the bandgap reference circuit. By changing the bias voltage applied to transistor bodies, the circuit can maintain stable reference voltage output while reducing power consumption. The body bias circuit modifies transistor parameters (threshold voltage) to optimize the balance between voltage stability and power consumption, allowing the circuit to operate efficiently across different temperature conditions without requiring excessive power.
2Stability of the object's composition
If higher output reference voltage is used to ensure stability, then temperature compensation is improved, but battery life decreases
Solution Approach 1:
The body biasing technique dynamically adjusts transistor threshold voltages to maintain optimal reference voltage levels. By changing bias conditions, the circuit achieves effective temperature compensation without requiring excessively high output reference voltages. This parameter adjustment allows the circuit to maintain stability across temperature variations while operating at lower voltage levels that conserve battery power and extend device operation time.
3Use of energy by moving object
If threshold voltage of transistors is increased through body biasing, then reference voltage is reduced, but power consumption decreases
Solution Approach 1:
The body bias circuit dynamically adjusts transistor threshold voltages to optimize the reference voltage output. By increasing transistor threshold voltages through reverse body biasing, the circuit reduces the overall reference voltage level and corresponding power consumption. The bias circuit continuously monitors and adjusts bias conditions to maintain reference voltage stability within acceptable ranges while maximizing power savings through optimized transistor operating points.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The body biasing technique effectively reduces the output reference voltage, lowering power consumption and increasing the operating time between battery charges in mobile electronic devices by optimizing the voltage ratios and threshold voltages of transistors within the BGR circuit.
Implementation Method 1
Body bias circuitry is configured to apply a body bias to at least one of the first and second body regions
Data Source
AI summary
Some embodiments relate to a device disposed on a semiconductor substrate. The semiconductor substrate includes a base region and a crown structure extending upwardly from the base region. The crown structure is narrower than the base region. A plurality of fins extend upwardly from an upper surface of the crown structure. A gate dielectric material is disposed over upper surfaces and sidewalls of the plurality of the fins. A conductive electrode is disposed along sidewall portions of the gate dielectric material. An uppermost surface of the conductive electrode resides below the upper surfaces of the plurality of fins.