U-Shaped Channel Transistor Manufacturing via Silicon Oxide Etch Stop
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Solution Overview
Problem
The manufacturing of tunneling field effect transistors with U-shaped channels faces challenges such as reduced product yield due to pattern misalignment and difficulty in producing narrow channels, which affects the integration degree and performance of semiconductor chips.
Innovation Solution
A method involving multiple insulation and doping film formations, etching processes, and conductive layer deposition to create a U-shaped channel structure, including forming doping regions, insulation films, and conductive layers, which allows for precise control and alignment to extend transistor channel length and reduce leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If photoresist pattern formation is used to create U-shaped channel, then the channel structure can be formed, but pattern misalignment occurs reducing manufacturing yield
Solution Approach 1:
The patent introduces an intermediary material (silicon oxide film) between the substrate and the etching process. This intermediary layer serves as a precise etching stop layer that eliminates the need for photoresist alignment, thereby preventing pattern misalignment and improving manufacturing yield while maintaining accurate channel structure formation
Solution Approach 2:
The patent extracts and removes the problematic photoresist pattern formation step from the manufacturing process. By using direct etching with silicon oxide as a stop layer, the method eliminates the source of alignment errors while still achieving the desired U-shaped channel structure
2Manufacturing precision
If conventional etching is used to form U-shaped channel, then the channel can be created, but narrow channel fabrication is difficult
Solution Approach 1:
The silicon oxide film acts as a precise intermediary etching stop layer that defines the exact channel width. This stop layer enables accurate formation of narrow channels by providing a sharp etching termination point, making narrow channel fabrication much easier and more precise
Solution Approach 2:
The patent performs preliminary formation of the silicon oxide film before the etching process. This pre-formed stop layer establishes the precise channel dimensions in advance, enabling accurate narrow channel creation during the subsequent etching step without requiring complex alignment procedures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the production of extremely narrow U-shaped channels, improves manufacturing yield, and effectively restrains leakage current, thereby enhancing chip integration and reducing power consumption.
Implementation Method 1
form a third kind of insulation film on the substrate exposed through oxidation
Data Source
AI summary
The present invention belongs to the technical field of semiconductor device manufacturing and specifically relates to a method for manufacturing a tunneling field effect transistor with a U-shaped channel. The U-shaped channel can effectively extend the transistor channel length, restrain the generation of leakage current in the transistor, and decrease the chip power consumption. The method for manufacturing a tunneling field effect transistor with a U-shaped channel put forward in the present invention is capable of realizing an extremely narrow U-shaped channel, overcoming the alignment deviation introduced by photoetching, and improving the chip integration degree.