Ultra-high Voltage Device Non-Gradient Implant Profile
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Solution Overview
Problem
Conventional ultra-high voltage devices face a trade-off between low on-resistance (Rds-on) and sufficient breakdown voltage (BV), where high implant region concentration reduces Rds-on but decreases BV, and low concentration implant regions improve BV but increase Rds-on, necessitating a balance between the two.
Innovation Solution
The device incorporates a substrate with a first and second well zone, a gate oxide layer, a gate, an insulation region, and implant regions with sub-implant regions of different concentrations, where the higher concentration sub-implant region is adjacent to the junction and the lower concentration sub-implant region is distant, forming a non-gradient implant profile to enhance BV while maintaining low Rds-on.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high concentration implant region is adopted, then on-resistance is reduced, but breakdown voltage is decreased
Solution Approach 1:
The patent applies local quality by creating different implant concentration zones within the same implant region. Specifically, it forms a first implant region with first concentration and a second implant region with second concentration (different from the first) underneath the insulation region. This allows different areas to have optimized properties: one area for low on-resistance and another for high breakdown voltage, resolving the contradiction between these two parameters.
Solution Approach 2:
The patent segments the implant region into multiple sub-regions with different concentrations. By dividing the单一的 implant region into a first implant region and a second implant region with different doping concentrations, it enables each segment to fulfill different functional requirements - one segment optimizes for on-resistance while another optimizes for breakdown voltage, thus resolving the technical contradiction.
2Reliability
If low concentration implant region is adopted, then breakdown voltage process window is improved, but on-resistance is increased
Solution Approach 1:
The patent applies local quality by creating different implant concentration zones within the same implant region. Specifically, it forms a first implant region with first concentration and a second implant region with second concentration (different from the first) underneath the insulation region. This allows different areas to have optimized properties: one area for low on-resistance and another for high breakdown voltage, resolving the contradiction between these two parameters.
Solution Approach 2:
The patent segments the implant region into multiple sub-regions with different concentrations. By dividing the单一的 implant region into a first implant region and a second implant region with different doping concentrations, it enables each segment to fulfill different functional requirements - one segment optimizes for on-resistance while another optimizes for breakdown voltage, thus resolving the technical contradiction.
Data Source
AI summary
An ultra-high voltage device is provided. The ultra-high voltage device includes a substrate, a first well zone formed in the substrate, a second well zone formed in the substrate adjacent to the first well zone, a gate oxide layer formed on the first well zone and the second well zone, a gate formed on the gate oxide layer, an insulation region formed on the surface of the second well zone, a first implant region formed in the second well zone underneath the insulation region, a second implant region formed below the first implant region, and a junction formed between the first implant region and the second implant region. At least one of the first implant region and the second implant region includes at least two sub-implant regions having different implant concentrations. The sub-implant region having the higher implant concentration is adjacent to the junction.