UHV Device P+ Diffusion Modulation for ESD Protection
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Solution Overview
Problem
Ultra High Voltage (UHV) devices suffer from low Electro Static Discharge (ESD) capability due to non-uniform E-field distribution and local current crowding effects at discontinuous or high curvature regions, which leads to inadequate protection of sensitive electronic components.
Innovation Solution
Modulation of the P+ diffusion layer or its extension in UHV devices, increasing the local breakdown voltage in high curvature regions, allowing ESD to trigger and conduct current in low curvature regions, thereby alleviating the low ESD capability issue.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If the device structure includes discontinuous regions or high curvature regions, then the device can be manufactured with standard processes, but the ESD capability deteriorates due to non-uniform E-field distribution and local current crowding
Solution Approach 1:
The patent introduces a modulation region with different doping concentration or type in high curvature regions where current crowding occurs. This local modification creates non-uniform doping distribution that compensates for the non-uniform E-field, thereby improving ESD capability specifically in the problematic regions without changing the overall device structure
Solution Approach 2:
The patent modifies doping parameters (concentration, type, or depth) in specific regions to alter the electrical characteristics. By changing the doping parameters in the modulation region, the patent achieves more uniform E-field distribution and improves breakdown characteristics while maintaining standard manufacturing processes
2Device complexity
If the E-field distribution is non-uniform in high curvature regions, then the device structure is simpler, but the breakdown voltage decreases leading to poor ESD protection
Solution Approach 1:
The patent applies local quality modification by introducing a modulation region with distinct doping characteristics in high curvature areas. This localized doping adjustment creates more uniform E-field distribution specifically where needed, increasing breakdown voltage without complicating the overall device structure
Solution Approach 2:
The modulation region acts as an intermediary between the high curvature region and the bulk material. By introducing this intermediate layer with controlled doping, the patent mediates the E-field distribution to prevent excessive field concentration at curvature peaks, thereby increasing breakdown voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modulation of the P+ diffusion layer enhances the ESD capability of UHV devices by increasing the local breakdown voltage in high curvature regions, ensuring that ESD events are effectively managed and do not damage sensitive components.
Implementation Method 1
non-uniform E-field distribution and local current crowding effect at a discontinuous region or a high curvature region of the devices
Implementation Method 2
increasing the local breakdown voltage in high curvature regions
Implementation Method 3
ESD (Electro Static Discharge). Sensitive components need to be protected from ESD
Data Source
AI summary
According to an embodiment, a semiconductor device is provided. The device includes a second region having a greater curvature than a first region. The device includes an epitaxy layer of a first conductivity type, a well of a second conductivity type in the epitaxy layer, a drain in the epitaxy layer, a source in the well, and a bulk in the well and in contact with the source, the bulk having a greater area in the second region than in the first region.