UHV Semiconductor Shielding Structure for Breakdown Voltage Stability
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Solution Overview
Problem
Traditional high voltage resistors suffer from device breakdown issues due to limited breakdown voltage, which is exacerbated by the increasing complexity and decreasing size of semiconductor devices, requiring larger component areas to maintain reliability.
Innovation Solution
A shielding structure is provided for ultra-high voltage semiconductor devices, incorporating a polysilicon line connected to the high voltage junction termination component, which reduces the component area by approximately 13% and effectively shields the component from high-voltage electric fields, enhancing breakdown voltage robustness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional high voltage resistor designs are used, then device breakdown voltage is limited, but component area can be maintained larger
Solution Approach 1:
The high voltage junction termination component is divided into multiple segments with different doping concentrations arranged in a gradient pattern. This segmentation allows each region to handle different voltage stress levels, enabling the component to withstand ultra-high voltages while maintaining a compact area by optimizing the spatial distribution of electrical properties.
Solution Approach 2:
Different regions of the component are assigned different local properties through varying doping concentrations. The doping gradient creates areas with progressively changing electrical characteristics, allowing the component to manage electric field distribution efficiently across its structure, thereby achieving high breakdown voltage without requiring proportionally larger area.
2Productivity
If component size is decreased to increase density, then manufacturing complexity increases, but breakdown voltage stability may be compromised
Solution Approach 1:
The invention changes the doping concentration parameter across the component structure by implementing a doping gradient. This parameter variation allows the component to maintain electrical stability and breakdown voltage performance in smaller geometries, as the gradient adapts the electrical properties to match the reduced physical dimensions while preserving functional reliability.
3Reliability
If shielding structure is added to protect from high-voltage electric fields, then breakdown voltage robustness is enhanced, but device complexity increases
Solution Approach 1:
The shielding function is merged with the existing junction termination structure by integrating the doping gradient directly into the termination region. This combination eliminates the need for separate shielding components, as the graded doping profile itself provides the electric field management and shielding effect, thereby enhancing breakdown voltage robustness without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shielding structure significantly reduces the area of high voltage junction termination components while maintaining breakdown voltage stability, addressing the limitations of traditional designs and improving reliability in ultra-high voltage semiconductor devices.
Implementation Method 1
the shielding structure effectively shields the component from high-voltage electric fields, enhancing breakdown voltage robustness
Data Source
AI summary
A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.