UHV Shielding Structure for Stable Breakdown in Compact Junction Termination
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Traditional high voltage resistors suffer from device breakdown issues due to limited breakdown voltage, which is exacerbated by the increasing complexity and decreasing size of semiconductor devices, making it difficult to maintain reliability and efficiency in high voltage applications.
Innovation Solution
A shielding structure is provided for ultra-high voltage semiconductor devices, incorporating a source region, drain region, and a shielding structure formed on the oxide layer above the drain region, connected to the high voltage terminal and low voltage terminal, which reduces the area of the high voltage junction termination component by approximately 13% and effectively shields the component from high-voltage electric fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional high voltage resistors are used, then the device can handle high voltage, but the breakdown voltage is limited and device area increases
Solution Approach 1:
The patent segments the high voltage junction termination component into multiple regions with different doping concentrations and types (e.g., first and second doped regions with different doping concentrations). This segmentation allows each region to contribute differently to voltage handling, improving breakdown voltage stability while reducing the total component area by optimizing the spatial distribution of functional regions.
Solution Approach 2:
The patent applies local quality by creating regions with varying doping concentrations and types within the semiconductor device. Specific areas have tailored electrical properties (e.g., high doping concentration in certain regions, low doping in others) to optimize voltage distribution and field control locally, enabling smaller component area while maintaining high breakdown voltage stability.
2Area of moving object
If semiconductor device size decreases, then integration density increases, but manufacturing complexity increases
Solution Approach 1:
The patent employs preliminary action by forming the complex doped regions and junction structures during the initial fabrication sequence using integrated processing steps. The multiple doped regions, oxide layers, and metal interconnections are established in advance through coordinated deposition, doping, and etching processes, reducing the need for additional complex processing steps later and managing manufacturing complexity despite small device area.
Solution Approach 2:
The patent achieves multi-functionality by designing the high voltage junction termination component to simultaneously perform voltage blocking, current handling, and field control functions within a single integrated structure. The combined doped regions, oxide layers, and metal interconnections serve multiple purposes, reducing the number of separate components needed and simplifying the overall manufacturing process despite the compact size.
3Productivity
If component density increases, then device area decreases, but electric field control becomes more difficult
Solution Approach 1:
The patent uses intermediary elements such as oxide layers and carefully designed doped regions that act as mediators to control and distribute electric fields between high voltage and low voltage regions. These intermediary structures provide gradual transitions and field smoothing, enabling effective electric field control in high-density configurations where direct high voltage-to-low voltage transitions would be problematic.
Solution Approach 2:
The patent applies equipotentiality principles by creating regions with controlled potential distributions through strategic doping and interconnection design. The metal interconnections and doped regions are configured to establish equipotential surfaces that guide electric field lines and prevent field concentration, enabling stable field control despite increased component density and reduced device area.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The shielding structure enhances the robustness of the high voltage junction termination component, maintaining breakdown voltage stability and reducing the component's area, thereby improving the reliability and efficiency of ultra-high voltage semiconductor devices.
Implementation Method 1
forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, wherein the shielding structure is configured to shield a high voltage electric field, generated by the high voltage interconnection
Data Source
AI summary
A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.