Ultra Low-k Opening Pattern Formation via Metal Hard Mask Removal
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Solution Overview
Problem
Existing methods for forming opening patterns in ultra low dielectric constant materials often result in pattern distortion due to stress relaxation of the patterned metal hard mask layer, which affects the profile quality of the openings.
Innovation Solution
A method involving sequential formation of an ultra low dielectric constant layer, a dielectric hard mask layer, and a patterned metal hard mask layer on a substrate, where the patterned metal hard mask layer is removed before forming the opening pattern, using techniques like CVD and PVD for layer deposition, and dry and wet etching for mask removal, to prevent distortion and improve profile quality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the patterned metal hard mask layer is retained during opening pattern formation, then the mask provides structural support, but stress relaxation causes pattern distortion
Solution Approach 1:
The patent removes the patterned metal hard mask layer before forming the opening pattern in the ultra low-k layer. This preliminary removal action prevents the metal layer's stress relaxation from occurring during the opening formation process, thereby eliminating the root cause of pattern distortion while maintaining manufacturing precision
Solution Approach 2:
The patent extracts the patterned metal hard mask layer from the structure before the opening formation step. By taking out the problematic metal layer that causes stress relaxation, the patent eliminates the source of pattern distortion without affecting the final opening pattern precision
2Manufacturing precision
If multiple layers are sequentially formed, then the opening pattern can be precisely transferred, but the process complexity increases
Solution Approach 1:
The patent segments the hard mask formation process into distinct sequential steps: first forming the dielectric hard mask layer, then adding the patterned metal hard mask layer, removing portions of the dielectric layer, and finally removing the metal layer before opening formation. This segmentation allows precise pattern transfer at each step while making the overall complex process more controllable and manageable
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively avoids pattern distortion and enhances the profile quality of the opening patterns, ensuring precise and reliable formation of features like trenches and via holes with improved aspect ratios.
Implementation Method 1
a method of forming the ultra low dielectric constant layer includes a chemical vapor deposition (CVD) method
Implementation Method 2
a method of forming the dielectric hard mask layer includes a physical vapor deposition (PVD) method or a CVD method
Implementation Method 3
a method of removing the portion of the dielectric hard mask layer includes a dry etching method
Implementation Method 4
a method of removing the patterned metal hard mask layer includes a wet etching method
Implementation Method 5
a method of removing the portion of the ultra low dielectric constant layer includes a dry etching method
Data Source
AI summary
A method of forming an opening pattern including the following steps is provided. An ultra low dielectric constant layer, a dielectric hard mask layer and a patterned metal hard mask layer are sequentially formed on a substrate. A portion of the dielectric hard mask layer is removed to form a patterned dielectric hard mask layer by using the patterned metal hard mask layer as a mask. The patterned metal hard mask layer is removed after forming the patterned dielectric hard mask layer. A portion of the ultra low dielectric constant layer is removed to form a first opening by using the patterned dielectric hard mask layer as a mask.