Ultra-low Voltage Temperature Threshold Detector for SRAM
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Solution Overview
Problem
The reliability of SRAM operations in integrated circuit dies is compromised by temperature variations, particularly at low voltage levels, due to conflicting requirements for read and write operations regarding temperature and operating voltage, leading to increased failures in read and write operations.
Innovation Solution
An integrated circuit die that detects the temperature of the semiconductor substrate and selectively applies a bias voltage to the body regions of transistors in the SRAM array based on whether the temperature is above or below a threshold, using a threshold temperature detector to output either a high supply voltage or ground, thereby adjusting the body bias voltage to improve SRAM reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the operating voltage is lowered to reduce power consumption, then energy efficiency improves, but the reliability of SRAM read and write operations deteriorates due to temperature sensitivity
Solution Approach 1:
The patent changes the body bias voltage parameter dynamically based on temperature conditions. At low temperatures, a first body bias voltage is applied to optimize read operations, while at high temperatures, a second body bias voltage is applied to optimize write operations. This parameter adaptation allows the SRAM to maintain reliable operation across temperature ranges even at reduced operating voltages, thereby resolving the contradiction between low power consumption and operation reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of SRAM operations by reducing errors during read and write operations across various temperature conditions, improving performance at both high and low temperatures.
Implementation Method 1
Because the threshold voltages of the transistors vary with temperature, as the temperature of the semiconductor substrate changes, the threshold voltages of the transistors also change. As the temperature crosses the threshold temperature, the output node is forced to either the high supply voltage or ground
Data Source
AI summary
An integrated circuit die includes a plurality of transistors formed in a semiconductor substrate, the body regions of the transistors on a doped well region of the semiconductor substrate. A threshold detector selectively applies either a first voltage or second voltage to the doped well region based on whether the temperature of the semiconductor substrate is above or below a threshold temperature.