Ultra-Thin Dielectric Layer Current and Voltage References
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Solution Overview
Problem
Current circuit design techniques struggle to provide high-performance at ultra-low bias currents due to intrinsic device behavior, particularly in ultra-deep submicron CMOS processes, leading to high standby current and reduced current gain, which limits the efficiency of scavenged power supplies and device functionality.
Innovation Solution
The use of ultra-thin dielectric-layer components to generate stable current and voltage references, where a unidirectional current flows through the dielectric layer, allowing for the creation of low-power circuits that are insensitive to variations in operating conditions, such as temperature and power supply voltage, by employing driving circuitry like current mirrors and differential amplifiers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional circuit design techniques are used in ultra-deep submicron CMOS processes, then device functionality is maintained, but gate leakage current increases and current gain decreases
Solution Approach 1:
The patent converts the harmful gate leakage current into a useful reference current source. By designing the ultra-thin dielectric layer component to operate in breakdown mode, the leakage current that would normally be wasted is instead harnessed to generate stable voltage and current references, directly addressing the contradiction by making the harmful effect beneficial.
2Use of energy by moving object
If ultra-low bias currents are used to reduce power consumption, then energy efficiency improves, but circuit performance deteriorates due to intrinsic device behavior
Solution Approach 1:
The patent changes the operating parameters of the ultra-thin dielectric layer component by applying a controlled voltage that induces breakdown mode operation. This parameter change enables the generation of stable reference currents and voltages at ultra-low power levels, resolving the contradiction between low power consumption and circuit performance by operating in a previously avoided regime.
3Area of moving object
If gate oxide thickness is reduced to enable smaller device geometries, then integration density improves, but standby current increases
Solution Approach 1:
The patent extracts and utilizes the leakage current phenomenon from ultra-thin dielectric layers as a functional resource. By taking out this previously harmful leakage current and converting it into useful reference signals, the patent enables ultra-low power operation while maintaining device functionality, effectively resolving the contradiction between small geometry and energy loss.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in stable output currents and voltages with minimal variation across a range of temperatures and power supply values, achieving low power consumption and improved functionality in devices powered by scavenged energy, such as solar cells and thermal harvesters.
Implementation Method 1
the first and second terminals contact the dielectric layer... driving circuitry operative to apply a voltage to the first terminal with respect to the second terminal, in order to cause a unidirectional current to flow through the dielectric layer
Data Source
AI summary
Low-power circuits for providing stable voltage and current references rely on currents flowing through ultra-thin dielectric layer components for operation. A current reference circuit includes driving circuitry operative to apply a voltage to the first terminal of the component with respect to the second terminal of the component in order to cause a current to flow through the dielectric layer, and sources a reference output current that is based on the current flow through the dielectric layer in response to the applied voltage. A voltage reference circuit includes a current source which applies a current to the ultra-thin dielectric layer component, and maintains an output node at a stable reference output voltage level based on the voltage across the ultra-thin dielectric layer component in response to the current flow through the dielectric layer.